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Showing results 1 to 6 of 6

1
Ab initio study of boron segregation and deactivation at Si/SiO2 interface

Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, International Union of Materials Research Societies - International Conference on Electronic Materials 2010, 2010-08

2
Diffusion and segregation of B dopants at Si/SiO2 interface

Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 13th Asian Workshop on First-Principles Electronic Structure Calculations, 2010-11

3
First-principles study on boron segregation at Si/SiO2 interface

Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 한국물리학회 가을학술논문발표회, 한국물리학회, 2010-10

4
Segregation of B dopants in Si/SiO2 interface

Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 6th KIAS Electronic Structure Calculation Workshop, KIAS, 2010-06

5
Stability and segregation of boron dopants at the Si/SiO2 interface

Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 2011 Materials Research Society (MRS) Spring Meeting, Materials Research Society, 2011-04

6
Stability of boron dopants at the Si/SiO2 interface

Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ry, B.; Chang, Kee-Joo, The 18th Korean Conference on Semiconductors, KCS, 2011-02

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