DC Field | Value | Language |
---|---|---|
dc.contributor.author | h. s. soh | ko |
dc.contributor.author | j. jang | ko |
dc.contributor.author | m. y. jung | ko |
dc.contributor.author | s. s. yoo | ko |
dc.contributor.author | Choochon Lee | ko |
dc.date.accessioned | 2013-02-25T10:58:55Z | - |
dc.date.available | 2013-02-25T10:58:55Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1993 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.63, no.6, pp.779 - 781 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/61672 | - |
dc.description.abstract | We studied the space charge limited current effect in hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs). We demonstrate that the drain current is space charge limited when the source-drain voltage is large and the gate voltage is small. Using this space charge limited current we determined the density of states in the gap of a-Si:H in a-Si:H TFT. | - |
dc.language | English | - |
dc.publisher | Amer Inst Physics | - |
dc.subject | A-SI-H | - |
dc.subject | DEPOSITION | - |
dc.title | DETERMINATION OF THE DENSITY-OF-STATES AT THE FERMI-LEVEL OF HYDROGENATED AMORPHOUS-SILICON IN THIN-FILM-TRANSISTOR STRUCTURE BY SPACE-CHARGE LIMITED CURRENT MEASUREMENT | - |
dc.type | Article | - |
dc.identifier.wosid | A1993LR25800025 | - |
dc.type.rims | ART | - |
dc.citation.volume | 63 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 779 | - |
dc.citation.endingpage | 781 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.109905 | - |
dc.contributor.nonIdAuthor | h. s. soh | - |
dc.contributor.nonIdAuthor | j. jang | - |
dc.contributor.nonIdAuthor | m. y. jung | - |
dc.contributor.nonIdAuthor | s. s. yoo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | A-SI-H | - |
dc.subject.keywordPlus | DEPOSITION | - |
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