Showing results 1 to 3 of 3
Evaluation of tin nitride (Sn3N4) via atomic layer deposition using novel volatile Sn precursors Park, Hyeonbin; Choi, Heenang; Shin, Sunyoung; Park, Bo Keun; Kang, Kibum; Ryu, Ji Yeon; Eom, Taeyong; et al, DALTON TRANSACTIONS, v.52, no.41, pp.15033 - 15042, 2023-10 |
Four-Bits-Per-Cell Operation in an HfO2-Based Resistive Switching Device Kim, Gun Hwan; Ju, Hyunsu; Yang, Min Kyu; Lee, Dong Kyu; Choi, Ji Woon; Jang, Jae Hyuck; Lee, Sang Gil; et al, SMALL, v.13, no.40, 2017-10 |
Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application Kim, Hyo Yeon; Jung, Eun Ae; Mun, Geumbi; Agbenyeke, Raphael E.; Park, Bo Keun; Park, Jin-Seong; Son, Seung Uk; et al, ACS APPLIED MATERIALS & INTERFACES, v.8, no.40, pp.26924 - 26931, 2016-10 |
Discover