Evaluation of tin nitride (Sn3N4) via atomic layer deposition using novel volatile Sn precursors

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Novel Sn precursors, Sn(tbip)(2), Sn(tbtp)(2), and Sn(tbta)(2), were synthesized and characterized using various analytical techniques and density functional theory calculations. These precursors contained cyclic amine ligands derived from iminopyrrolidine. X-ray crystallography revealed the formation of monomeric SnL2 with distorted seesaw geometry. Thermogravimetric analysis demonstrated the exceptional volatility of all complexes. Sn(tbtp)(2) showed the lowest residual weight of 2.7% at 265 degrees C. Sn3N4 thin films were successfully synthesized using Sn(tbtp)(2) as the Sn precursor and NH3 plasma. The precursor exhibited ideal characteristics for atomic layer deposition, with a saturated growth per cycle value of 1.9 & Aring; cy(-1) and no need for incubation when the film was deposited at 150-225 degrees C. The indirect optical bandgap of the Sn3N4 film was approximately 1-1.2 eV, as determined through ultraviolet-visible spectroscopy. Therefore, this study suggests that the Sn3N4 thin films prepared using the newly synthesized Sn precursor are suitable for application in thin-film photovoltaic devices.
Publisher
ROYAL SOC CHEMISTRY
Issue Date
2023-10
Language
English
Article Type
Article
Citation

DALTON TRANSACTIONS, v.52, no.41, pp.15033 - 15042

ISSN
1477-9226
DOI
10.1039/d3dt02138f
URI
http://hdl.handle.net/10203/315779
Appears in Collection
MS-Journal Papers(저널논문)
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