Browse "MS-Journal Papers(저널논문)" by Author Lee, WJ
Showing results 1 to 22 of 22
| A comparative study on the Si precursors for the atomic layer deposition of silicon nitride thin films Lee, WJ; Lee, JH; Park, Chong-Ook; Lee, YS; Shin, SJ; Rha, SK, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.5, pp.1352 - 1355, 2004-11 |
| Characterization of TiN barriers against Cu diffusion by capacitance-voltage measurement Rha, SK; Lee, SY; Lee, WJ; Hwang, YS; Park, Chong-Ook; Kim, DW; Lee, YS; et al, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.16, no.4, pp.2019 - 2025, 1998-01 |
| Copper chemical vapour deposition using copper(I) hexafluoroacetylacetonate trimethylvinylsilane Lee, WJ; Min, JS; Rha, SK; Chun , Soung Soon; Park, Chong-Ook; Kim, DW, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.7, no.2, pp.111 - 117, 1996-04 |
| Crystallization of amorphous WNx films Suh, BS; Cho, HK; Lee, YJ; Lee, WJ; Park, Chong-Ook, JOURNAL OF APPLIED PHYSICS, v.89, no.7, pp.4128 - 4133, 2001-04 |
| Deposition of PZT films by MOCVD at low temperature and their change in properties with annealing temperature and Zr/Ti ratio Kim, YM; Lee, WJ; Kim, Ho Gi, THIN SOLID FILMS, v.279, no.1-2, pp.140 - 144, 1996-06 |
| Effect of the pressure on the chemical vapor deposition of copper from copper hexafluoroacetylacetonate trimethylvinylsilane Lee, WJ; Rha, SY; Lee, SY; Kim, DW; Park, Chong-Ook, THIN SOLID FILMS, v.305, pp.254 - 258, 1997-01 |
| Effects of process parameters on titanium dioxide thin film deposited using ECR MOCVD Lee, JS; Song, HW; Lee, WJ; Yu, BG; No, Kwangsoo, THIN SOLID FILMS, v.287, no.1-2, pp.120 - 124, 1996-10 |
| Effects of SrF2 phase on electrical properties of SrTiO3 thin films deposited by plasma-enhanced metalorganic chemical vapor deposition Kim, NK; Yoon, SG; Lee, WJ; Kim, Ho Gi, INTEGRATED FERROELECTRICS, v.14, no.1-4, pp.105 - 113, 1997-01 |
| Effects of the annealing in Ar and H-2/Ar ambients on the microstructure and the electrical resistivity of the copper film prepared by chemical vapor deposition Rha, SK; Lee, WJ; Lee, SY; Kim, DW; Park, Chong-Ook; Chun , Soung Soon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.11, pp.5781 - 5786, 1996-11 |
| Effects of the integrity of silicon thin films on the electrical characteristics of thin dielectric ONO film Kim, DW; Kim, KJ; Kim, DI; Lee, WJ; Lee, SY; Lee, YJ; Rha, SK; et al, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.8, no.2, pp.91 - 94, 1997-04 |
| Effects of the partial pressure of copper (I) hexafluoroacetylacetonate trimethylvinylsilane on the chemical vapor deposition of copper Lee, SY; Rha, SK; Lee, WJ; Kim, DW; Hwang, JS; Park, Chong-Ook, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.36, pp.5249 - 5252, 1997-01 |
| Electrical properties of barium strontium titanate (BST) thin films deposited on various Pt-base electrodes Lee, WJ; Kim, Ho-Gi, INTEGRATED FERROELECTRICS, v.11, no.1-4, pp.111 - 119, 1995-11 |
| Electrical properties of lead zirconate titanate thin films deposited on lanthanum nickel cobaltate Choi, WY; Kim, Il-Doo; Ahn, JH; Kim, Ho Gi; Lee, WJ; Yoon, SG; Bai, K, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.504 - 2, 1999-07 |
| Electrical properties of Sb-doped PZT films deposited by dc reactive sputtering using multi-targets Choi, WY; Ahn, JH; Lee, WJ; Kim, Ho-Gi, MATERIALS LETTERS, v.37, no.3, pp.119 - 127, 1998-10 |
| Field-aided thermal chemical vapor deposition of copper using Cu(I) organometallic precursor Lee, WJ; Rha, SK; Lee, SY; Park, Chong-Ook, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.144, no.2, pp.683 - 686, 1997-02 |
| Grain growth of copper films prepared by chemical vapour deposition Rha, SK; Lee, WJ; Lee, SY; Kim, DW; Park, Chong-Ook, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.8, no.4, pp.217 - 221, 1997-08 |
| Improved TiN film as a diffusion barrier between copper and silicon Rha, SK; Lee, WJ; Lee, SY; Hwang, YS; Lee, YJ; Kim, DI; Kim, DW; et al, THIN SOLID FILMS, v.320, no.1, pp.134 - 140, 1998-05 |
| Interdiffusions and reactions in Cu/TiN/Ti/Si and Cu/TiN/Ti/SiO2/Si multilayer structures Rha, SK; Lee, WJ; Lee, SY; Kim, DW; Park, Chong-Ook; Chun, SS, JOURNAL OF MATERIALS RESEARCH, v.12, no.12, pp.3367 - 3372, 1997-12 |
| Investigation of silicon oxide thin films prepared by atomic layer deposition using SiH2Cl2 and O-3 as the precursors Lee, JH; Kim, UJ; Han, CH; Rha, SK; Lee, WJ; Park, Chong-Ook, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.43, no.3A, pp.L328 - L330, 2004-03 |
| Oxygen diffusion through RuO2 bottom electrode of integrated ferroelectric capacitors Ahn, JH; Lee, WJ; Kim, Ho Gi, MATERIALS LETTERS, v.38, no.4, pp.250 - 253, 1999-02 |
| Texture and sheet resistance of Al alloy thin films on Ti and TiN thin films Lee, WJ; Kim, SJ; Lee, WH; Lee, YJ; Lee, YS; Rha, SK; Park, Chong-Ook, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.15, no.1, pp.9 - 13, 2004-01 |
| Thermal stability of RuO2-based bottom electrodes during various ambient annealings Ahn, JH; Park, JH; Choi, GP; Choi, WY; Kim, Ho Gi; Lee, WJ; Yoon, SG, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.S491 - S495, 1999-07 |
Discover
Open Access
- 265 OA Article
Date issued
- 1,016 2020 - 2024
- 2,625 2010 - 2019
- 2,168 2000 - 2009
- 1,240 1990 - 1999
- 179 1980 - 1989