Effects of the annealing in Ar and H-2/Ar ambients on the microstructure and the electrical resistivity of the copper film prepared by chemical vapor deposition

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The copper films with a thickness of 600 nm were prepared on TiN at 180 degrees C under O.5 Torr using chemical vapor deposition (CVD) method. The deposited films were subjected to be annealed at various temperatures (350-550 degrees C) in Ar and H-2(10%)/Ar ambients. The changes of the microstructures and the electrical resistivity after annealing were investigated. H-2(10%)/Ar was more effective than Ar as an ambient gas for the post annealing of the copper films, because smaller resistivity and larger grain size of the annealed film was given. The resistivity of the annealed film decreased, and the grain size increased with the annealing temperature. However, 550 degrees C is found to be inappropriate as the annealing temperature, because the out-diffusion of silicon through the TiN layer was observed. Upon annealing at 450 degrees C for 30 min in an H-2(10%)/Ar ambient, the grain size of the film increased from 148 nm to 219 nm, and the resistivity decreased from 2.35 mu Omega . cm to 2.12 mu Omega . cm.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1996-11
Language
English
Article Type
Article
Keywords

ULSI APPLICATIONS; THIN-FILMS; METALLIZATION; INTERCONNECTIONS; ELECTROMIGRATION; CU

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.11, pp.5781 - 5786

ISSN
0021-4922
URI
http://hdl.handle.net/10203/77871
Appears in Collection
MS-Journal Papers(저널논문)RIMS Journal Papers
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