Electrical properties of Sb-doped PZT films deposited by dc reactive sputtering using multi-targets

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Sb-doped reactive sputtering-derived lead zirconate titanate (PZT) thin films were investigated with the intention of improving ferroelectric properties. Also, the atomic valence of Sb in PZT thin film was confirmed as trivalent cation (Sb3+) by X-ray photoelectron spectroscopy (XPS). According to the ionic radius and tolerance factor, Sb3+ tends to occupy the B-site of ABO(3) perovskite structure and acts as an acceptor that generates oxygen vacancies and holes. The P-r, E-c, E-i and polarization offset in lightly doped (< 1 at.%) PZT thin films increased as the Sb contents increased, but for heavily doped (> 1 at.%) PZT thin films, these parameters decreased. Lightly doped (similar to 1 at.%) PZST thin films exhibited improved fatigue properties (about 10% degradation of the remanent polarization after 1010 switching cycles). (C) 1998 Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
1998-10
Language
English
Article Type
Article
Keywords

FERROELECTRIC THIN-FILMS; FATIGUE; PB(ZR,TI)O-3; SRBI2TA2O9

Citation

MATERIALS LETTERS, v.37, no.3, pp.119 - 127

ISSN
0167-577X
DOI
10.1016/S0167-577X(98)00082-2
URI
http://hdl.handle.net/10203/70406
Appears in Collection
MS-Journal Papers(저널논문)
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