Browse "MS-Journal Papers(저널논문)" by Author Cho, HK

Showing results 1 to 42 of 42

1
Characteristics of InGaN/GaN light-emitting diode with Si delta-doped GaN contact layer

Jeon, SR; Jo, MS; Humg, TV; Yang, GM; Cho, HK; Lee, JeongYong; Hwang, SW; et al, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.188, no.1, pp.163 - 166, 2001-11

2
Characterization of pit formation in III-nitrides grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Yang, GM, APPLIED PHYSICS LETTERS, v.80, no.8, pp.1370 - 1372, 2002-02

3
Codoping characteristics of Zn with Mg in GaN

Kim, KS; Han, MS; Yang, GM; Youn, CJ; Lee, HJ; Cho, HK; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.77, no.8, pp.1123 - 1125, 2000-08

4
Control of wet-etching thickness in the vertical cavity surface emitting laser structure by in situ laser reflectometry

Cho, HK; Lee, JeongYong; Lee, B; Baek, JH; Han, WS, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.17, no.6, pp.2626 - 2629, 1999-11

5
Crystallization of amorphous WNx films

Suh, BS; Cho, HK; Lee, YJ; Lee, WJ; Park, Chong-Ook, JOURNAL OF APPLIED PHYSICS, v.89, no.7, pp.4128 - 4133, 2001-04

6
Defects in interfacial layers and their role in the growth of ZnO nanorods by metallorganic chemical vapor deposition

Park, DJ; Lee, JeongYong; Kim, DC; Mohanta, SK; Cho, HK, APPLIED PHYSICS LETTERS, v.91, pp.309 - 321, 2007-10

7
Dislocation reduction in GaN epilayers by maskless Pendeo-epitaxy process

Park, DJ; Lee, JeongYong; Cho, HK; Hong, CH; Cheong, HS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.1253 - 1256, 2004-11

8
Effect of a tensile strained Al0.1Ga0.9N capping layer on the optical and structural properties in InGaN/GaN superlattices

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.3, pp.425 - 428, 2001-09

9
Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM; Song, JH; Yu, PW, JOURNAL OF APPLIED PHYSICS, v.89, no.5, pp.2617 - 2621, 2001-03

10
Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells

Cho, HK; Lee, JeongYong; Sharma, N; Humphreys, CJ; Yang, GM; Kim, CS; Song, JH; et al, APPLIED PHYSICS LETTERS, v.79, no.16, pp.2594 - 2596, 2001-10

11
Effect of Si, Mg, and Mg-Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, SOLID-STATE ELECTRONICS, v.45, no.12, pp.2023 - 2027, 2001-12

12
Effects of buffer layer thickness on growth and properties of ZnO nanorods grown by metalorganic chemical vapour deposition

Kim, DC; Kong, BH; Cho, HK; Park, DJ; Lee, JeongYong, NANOTECHNOLOGY, v.18, pp.673 - 676, 2007-01

13
Effects of growth interruption on high indium content InGaN/GaN multi quantum wells

Cheong, MG; Choi, RJ; Kim, CS; Yoon, HS; Hong, CH; Suh, EK; Lee, HJ; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.38, no.6, pp.701 - 705, 2001-06

14
Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications

Kim, KS; Hong, CH; Lee, WH; Kim, CS; Cha, OH; Yang, GM; Suh, EK; et al, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.5, pp.11 - 74, 2000-01

15
Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density

Cho, HK; Lee, JeongYong; Yang, GM; Kim, CS, APPLIED PHYSICS LETTERS, v.79, no.2, pp.215 - 217, 2001-07

16
Formation of misfit dislocations and stacking faults in high indium content InxGa1-xN layers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.165 - 169, 2001-12

17
Growth and characterization study of multidimensional hierarchical ZnO nanostructures

Park, DJ; Kim, DC; Lee, JeongYong; Cho, HK, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.244, pp.1567 - 1572, 2007-05

18
Improved microstructural properties of a ZnO thin film using a buffer layer in-situ annealed in argon ambient

Park, DJ; Lee, JeongYong; Park, TE; Kim, YY; Cho, HK, THIN SOLID FILMS, v.515, pp.6721 - 6725, 2007-06

19
In-situ laser reflectometry method for wet-etch endpoint detection of VCSEL structure

Cho, HK; Lee, JeongYong; Lee, B; Baek, JH; Han, WS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.1076 - 1079, 1999-12

20
Influence of gas atmosphere during growth interruption in the deposition of ZnO films by magnetron sputtering

Park, TE; Kong, BH; Cho, HK; Park, DJ; Lee, JeongYong, PHYSICA B-CONDENSED MATTER, v.376, pp.735 - 740, 2006-04

21
Influence of Mg doping on structural defects in AlGaN layers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Jeon, SR; Yang, GM, APPLIED PHYSICS LETTERS, v.79, no.23, pp.3788 - 3790, 2001-12

22
Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition

Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM, JOURNAL OF APPLIED PHYSICS, v.91, no.3, pp.1166 - 1170, 2002-02

23
Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition

Cho, HK; Lee, JeongYong; Song, JH; Yu, PW; Yang, GM; Kim, CS, JOURNAL OF APPLIED PHYSICS, v.91, no.3, pp.1104 - 1107, 2002-02

24
Low temperature growth of ZnO thin film by metalorganic chemical vapor deposition

Kim, DC; Kong, BH; Cho, HK; Lee, JeongYong; Park, DJ, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.244, pp.1512 - 1516, 2007-05

25
Low-temperature growth and characterization of epitaxial ZnO nanorods by metalorganic chemical vapor deposition

Kim, DC; Kong, BH; Jeon, SY; Yoo, JB; Cho, HK; Park, DJ; Lee, JeongYong, JOURNAL OF MATERIALS RESEARCH, v.22, pp.2032 - 2036, 2007-07

26
Microstructural and electrical investigation of low resistance and thermally stable Pd/Ni contact on p-type GaN

Jang, HW; Cho, HK; Lee, JeongYong; Lee, JL, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.150, pp.G212 - G215, 2003-03

27
Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition

Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM; Sharma, N; Humphreys, C, JOURNAL OF CRYSTAL GROWTH, v.231, no.4, pp.466 - 473, 2001-11

28
Multi-emission from InGaN/GaN multi-quantum wells grown on hexagonal GaN microstructures

Kim, CS; Hong, YK; Hong, CH; Suh, EK; Lee, HJ; Kim, MH; Cho, HK; et al, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.183 - 186, 2001-11

29
Nano-scale island (dot)-induced optical emission in InGaN quantum wells

Kim, KS; Lee, WH; Kim, CS; Yang, GM; Hong, CH; Suh, EK; Lim, KY; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.141 - 146, 2001-07

30
Observation of phase separation and ordering in the InAlAs epilayer grown on InP at the low temperature

Cho, HK; Lee, JeongYong; Kwon, MS; Lee, B; Baek, JH; Han, WS, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.64, no.3, pp.174 - 179, 1999-10

31
Phase separation and stacking fault of InxGa1-xN layers grown on thick GaN and sapphire substrate by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.220, no.3, pp.197 - 203, 2000-12

32
Response to "Comment on Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells " [Appl. Phys. Lett. 81, 3100 (2002)]

Cho, HK; Lee, JeongYong; Sharma, N; Humphreys, CJ; Yang, GM; Kim, CS; Song, JH; et al, APPLIED PHYSICS LETTERS, v.81, no.16, pp.3102 - 3103, 2002-10

33
Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

Cho, HK; Lee, JeongYong; Leem, JY, APPLIED SURFACE SCIENCE, v.221, pp.288 - 292, 2004-01

34
Structural and optical characteristics of InGaN/GaN multiple quantum wells with different growth interruption

Cho, HK; Lee, JeongYong; Sharma, N; Humphreys, J; Yang, GM; Kim, CS, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.165 - 168, 2001-11

35
Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions

Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM, JOURNAL OF ELECTRONIC MATERIALS, v.30, no.10, pp.1348 - 1352, 2001-10

36
Structural properties of GaN grown by pendeo-epitaxy with in-doping

Hong, YK; Kim, CS; Jung, HS; Hong, CH; Kim, MH; Leem, SJ; Cho, HK; et al, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.235 - 238, 2001-11

37
Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Jeon, SR; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.233, no.4, pp.667 - 672, 2001-12

38
Study on the growth of crack-free AlxGa1-xN (0.133 >= x > 0.1)/GaN heterostructure with low dislocation density

Cho, HK; Lee, JeongYong; Choi, SC; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.222, no.1-2, pp.104 - 109, 2001-01

39
Superlattice-like stacking fault and phase separation of InxGa1-xN grown on sapphire substrate by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, APPLIED PHYSICS LETTERS, v.77, no.2, pp.247 - 249, 2000-07

40
Synthesis and microstructural characterization of growth direction controlled ZnO nanorods using a buffer layer

Park, DJ; Kim, DC; Lee, JeongYong; Cho, HK, NANOTECHNOLOGY, v.17, pp.5238 - 5243, 2006-10

41
Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells

Lee, WH; Kim, KS; Yang, GM; Hong, CH; Lim, KY; Suh, EK; Lee, HJ; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.136 - 140, 2001-07

42
Thermal etching effects on InGaN/GaN and GaN/AlGaN quantum well structures during metalorganic chemical vapor deposition

Choi, SC; Song, YH; Jeon, SL; Jang, HJ; Yang, GM; Cho, HK; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.38, no.4, pp.413 - 415, 2001-04

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