Codoping characteristics of Zn with Mg in GaN

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The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Omega cm) and a high hole concentration (8.5x10(17) cm(-3)) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0x10(-4) Omega cm(2), which is one order of magnitude lower than that of Mg doped only GaN film (1.9x10(-3) Omega cm(2)). (C) 2000 American Institute of Physics. [S0003-6951(00)02234-8].
Publisher
AMER INST PHYSICS
Issue Date
2000-08
Language
English
Article Type
Article
Keywords

P-TYPE GAN; OHMIC CONTACTS; GROWN GAN; SUPERLATTICES; SI

Citation

APPLIED PHYSICS LETTERS, v.77, no.8, pp.1123 - 1125

ISSN
0003-6951
DOI
10.1063/1.1289494
URI
http://hdl.handle.net/10203/77842
Appears in Collection
MS-Journal Papers(저널논문)
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