THE ADHESION OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED TUNGSTEN FILMS ON SILICON AND SIO2 FOR SIH4-H2-WF6 AND H2-WF6 PROCESSES

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Tungsten films were deposited on silicon and SiO2 by the SiH4 and H2 reduction of WF6. The stress, grain size and microstructure of the deposits were investigated to find the major factors affecting the adhesion. The deposited tungsten films under our experimental conditions have tensile stress. Tungsten films on silicon and SiO2 have a micropore structure. The grain size increases with the deposition temperature. The adhesion was measured by both tape and scratch tests to obtain quantitative data. The peel strength is inversely proportional to the residual tensile stress.
Publisher
ELSEVIER SCIENCE SA LAUSANNE
Issue Date
1991-06
Language
English
Article Type
Article
Keywords

CVD

Citation

THIN SOLID FILMS, v.201, no.1, pp.167 - 175

ISSN
0040-6090
DOI
10.1016/0040-6090(91)90164-S
URI
http://hdl.handle.net/10203/56106
Appears in Collection
MS-Journal Papers(저널논문)RIMS Journal Papers
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