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Showing results 1 to 7 of 7

1
Conductance imaging of thermally desorbed silicon oxide

Park, JY; Phaneuf, RJ, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.21, no.4, pp.1254 - 1257, 2003-07

2
Direct imaging of a biased p-n junction with conductance mapping

Park, JY; Williams, ED; Phaneuf, RJ, JOURNAL OF APPLIED PHYSICS, v.91, no.6, pp.3745 - 3749, 2002-03

3
Investigation of the direct electromigration term for Al nanodots within the depletion zone of a pn junction

Park, JY; Phaneuf, RJ, JOURNAL OF APPLIED PHYSICS, v.94, no.10, pp.6883 - 6886, 2003-11

4
Polarity dependence in pulsed scanning tunneling microscopy fabrication and modification of metal nanodots on silicon

Park, JY; Phaneuf, RJ, JOURNAL OF APPLIED PHYSICS, v.92, no.4, pp.2139 - 2143, 2002-08

5
Scanning tunneling spectroscopy of field-induced Au nanodots on ultrathin oxides on Si(100)

Park, JY; Phaneuf, RJ; Williams, ED, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.19, no.2, pp.523 - 526, 2001

6
Time response in tunneling to a pn junction

Park, JY; Phaneuf, RJ, APPLIED PHYSICS LETTERS, v.82, no.1, pp.64 - 66, 2003-01

7
Variation of threshold field in field induced fabrication of Au nanodots on ultrathin in situ grown silicon oxide

Park, JY; Phaneuf, RJ; Williams, ED, SURFACE SCIENCE, v.470, no.1-2, pp.L69 - L74, 2000-12

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