Conductance imaging of thermally desorbed silicon oxide

Cited 10 time in webofscience Cited 0 time in scopus
  • Hit : 129
  • Download : 0
We report on the use of scanning tunneling microscopy-conductance mapping to image voids in a thermally decomposed wet-chemical silicon oxide. Prominent contrast is observed between regions of remaining oxide and atomically clean silicon surface regions due to the difference in the local density of electronically active surface states. Differences in measured tunneling spectra within the voids, and in the surrounding oxidized regions, confirm that the origin of the contrast is mainly due to surface Fermi-level pinning at the clean Si(100) surface and metal-insulator-semiconductor junction behavior at the oxidized region. The maps show little sensitivity to pure topographical features, such as steps, and allow selective probing of electronic variations across a device structure with a resolution of 2 nm or better. (C) 2003 American Vacuum Society.
Publisher
A V S AMER INST PHYSICS
Issue Date
2003-07
Language
English
Article Type
Article
Citation

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.21, no.4, pp.1254 - 1257

ISSN
1071-1023
DOI
10.1116/1.1574050
URI
http://hdl.handle.net/10203/280490
Appears in Collection
CH-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 10 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0