Variation of threshold field in field induced fabrication of Au nanodots on ultrathin in situ grown silicon oxide

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We report on the variation of threshold field with oxide thickness for field evaporation of Au nanodots onto ultrathin oxide layers on Si(1 0 0). Au dots of 1-10 nm diameter were fabricated on an in situ oxidized Si(1 0 0) substrate by the application of a voltage pulse between an Au coated STM tip and the sample. Under feedback-controlled tunneling conditions (V-s = 2 V, I-t = 3 nA), the voltage required for field deposition increased roughly linearly from 5.8 to 11 V as average oxide thickness increased from 0 to 8 Angstrom. This corresponds to a change in the threshold field of about 0.3 V/Angstrom, which is roughly consistent with a calculation based on shielding of the image charge by the intervening oxide layer. (C) 2000 Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2000-12
Language
English
Citation

SURFACE SCIENCE, v.470, no.1-2, pp.L69 - L74

ISSN
0039-6028
DOI
10.1016/S0039-6028(00)00897-9
URI
http://hdl.handle.net/10203/280487
Appears in Collection
CH-Journal Papers(저널논문)
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