Browse "Dept. of Physics(물리학과)" by Subject MOLECULAR-BEAM EPITAXY

Showing results 1 to 28 of 28

1
A first-principles study of carbon impurities in GaAs and InAs

Chang, Kee-Joo; Lee, SG; Cheong, BH, MATERIALS SCIENCE FORUM, v.196-201, pp.803 - 807, 1995-11

2
Atomic structure of defect complexes containing carbon and hydrogen in GaAs

Lee, SG; Chang, Kee-Joo, PHYSICAL REVIEW B, v.54, no.12, pp.8522 - 8526, 1996-09

3
Band-edge exciton transitions in (Ga1-xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition

Jeon, H. C.; Kang, T. W.; Kim, T. W.; Cho, Yong-Hoon, SOLID STATE COMMUNICATIONS, v.138, no.9, pp.444 - 447, 2006

4
COMPENSATION AND DIFFUSION MECHANISMS OF CARBON DOPANTS IN GAAS

CHEONG, BH; Chang, Kee-Joo, PHYSICAL REVIEW B, v.49, no.24, pp.17436 - 17439, 1994-06

5
Concentration dependent electron distributions in heavily Si-doped GaAs

Lee, NY; Kim, Jae Eun; Park, Hae Yong; Kwak, DH; Lee, Hee Chul; Lim, H, SOLID STATE COMMUNICATIONS, v.99, no.8, pp.571 - 575, 1996-08

6
Defect properties and p-type doping efficiency in phosphorus-doped ZnO

Lee, Woo-Jin; Joon Goo, Kang; Chang, Kee-Joo, PHYSICAL REVIEW B, v.73, pp.024117 - 024117, 2006-01

7
Depth-resolved optical studies of excitonic and phonon-assisted transitions in ZnO epilayers

Cho, Yong-Hoon; Kim, JY; Kwack, HS; Kwon, BJ; Dang, LS; Ko, HJ; Yao, T, APPLIED PHYSICS LETTERS, v.89, pp.1681 - 1688, 2006-11

8
Effects of Surface Recombination on Exciton Dynamics in GaN Nanorods

Park, YS; Kang, TW; Im, H; Lee, SK; Cho, YH; Park, CM; Han, MS; et al, JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.4, pp.307 - 311, 2009-12

9
Energetics and hydrogen passivation of carbon-related defects in InAs and In0.5Ga0.5As

Lee, SG; Chang, Kee-Joo, PHYSICAL REVIEW B, v.53, no.15, pp.9784 - 9790, 1996-04

10
Energetics of cubic and hexagonal phases in Mn-doped GaN: First-principles pseudopotential calculations

Choi, Eun-Ae; Kang, Joongoo; Chang, Kee-Joo, PHYSICAL REVIEW B, v.74, no.24, pp.245218 - 245218, 2006-12

11
Enhancement of the magnetic properties in (Ga1-xMnx)N thin films due to Mn-delta doping

Jeon, HC; Kang, TW; Kim, TW; Kang, JG; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.87, pp.092501 - 092501, 2005-08

12
Excitonic transition dynamics on front and back surfaces of ZnO thin films

Lee, Sun-Kyun; Kwon, Bong-Joon; Cho, Yong-Hoon; Ko, Hang-Ju; Yao, Takafumi, PHYSICAL REVIEW B, v.84, no.20, 2011-11

13
Excitonic transitions in (Ga1-xMx)N thin films with high Curie temperature

Jeon, HC; Lee, JA; Shon, Y; Lee, SJ; Kang, TW; Kim, TW; Yeo, YK; et al, JOURNAL OF CRYSTAL GROWTH, v.278, pp.671 - 674, 2005-05

14
FIRST-PRINCIPLES STUDY OF THE COMPENSATION MECHANISM FOR NITROGEN ACCEPTORS IN ZNSE

CHEONG, BH; PARK, CH; Chang, Kee-Joo, PHYSICAL REVIEW B, v.51, no.16, pp.10610 - 10614, 1995-04

15
GaN quantum dots: Physics and applications

Dang, LS; Fishman, G; Mariette, H; Adelmann, C; Martinez, E; Simon, J; Daudin, B; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.657 - 661, 2003-02

16
Island density in homoepitaxial growth: improved Monte Carlo results

Jeong, Hawoong; Kahng, B; Wolf, DE, PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, v.245, no.3-4, pp.355 - 360, 1997-11

17
Magnetic and Electronic Properties of a Mn Delta-doping GaN Layer

Jeon, HC; Lee, SJ; Kang, TW; Chang, Kee-Joo; Yeo, Yung Kee; George, TF, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, pp.1361 - 1364, 2011-05

18
Micro- and Time-resolved Photoluminescence in GaN Nanorods with Different Diameters

Park, YS; Im, H; Yoon, IT; Lee, SK; Cho, Yong-Hoon; Taylor, RA, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.57, pp.756 - 759, 2010-10

19
Multiple relaxations of the cluster surface diffusion in a homoepitaxial SrTiO3 layer

Woo, Chang-Su; Chu, Kanghyun; Song, Jong-Hyun; Yang, Chan-Ho, APPLIED PHYSICS LETTERS, v.112, no.13, pp.131602, 2018-03

20
Numerical test of the damping time of layer-by-layer growth on stochastic models

Park, S; Jeong, Hawoong; Kahng, B, PHYSICAL REVIEW E, v.59, no.5, pp.6184 - 6187, 1999-05

21
Optical investigation of p-type ZnO epilayers doped with different phosphorus concentrations by radio-frequency magnetron sputtering

Kwon, BJ; Kwack, HS; Lee, SK; Cho, Yong-Hoon; Park, SJ, APPLIED PHYSICS LETTERS, v.91, pp.851 - 858, 2007-08

22
Optical properties of ZnO powder prepared by using a proteic sol-gel process

Kwon, Bong-Joon; Woo, Hyun-Joo; Park, Ji-Yeon; Jang, Kiwan; Lim, Seung-Hyuk; Cho, Yong-Hoon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.5, pp.739 - 742, 2013-03

23
Optical properties of ZnSSe/ZnMgSSe quantum wells

Chung, TY; Oh, JH; Lee, SG; Jeong, JW; Chang, Kee-Joo, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.12, no.6, pp.701 - 707, 1997-06

24
P-type doping with group-I elements and hydrogenation effect in ZnO

Lee, EC; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.376, pp.707 - 710, 2006-04

25
Possible p-type doping with group-I elements in ZnO

Lee, EC; Chang, Kee-Joo, PHYSICAL REVIEW B, v.70, no.11, pp.115210 - 115210, 2004-09

26
Stress relaxation in thick-film GaN grown by hydride vapor phase epitaxy on sapphire and spinel substrates as studied by photoluminescence and Raman spectroscopy

Park, Hae Yong; Kim, Jae Eun, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, no.2, pp.163 - 167, 1999-02

27
Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate

Stolz, Arnaud; Ko, Suck-Min; Patriarche, Gilles; Dogheche, Elhadj; Cho, Yong-Hoon; Decoster, Didier, APPLIED PHYSICS LETTERS, v.102, no.2, pp.021905, 2013-01

28
THEORY OF DEFECT STABILITY AND SELF-DIFFUSION MECHANISM IN CARBON-DOPED GAAS

CHEONG, BH; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.27, pp.206 - 209, 1994-12

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