Excitonic transitions in (Ga1-xMx)N thin films with high Curie temperature

Abstract

(Ga1-xMnx)N thin films grown on GaN buffers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors with excitonic transitions. The magnetization curves as functions of the magnetic field at 5 and 300K indicated that ferromagnetisin existed in the (Ga1-xMnx)N thin films and that the Curie temperature of the (Ga1-xMnx)N thin film was above room temperature. Photoluminescence spectra showed the band-edge exciton transitions in (Ga1-xMnx)N thin films, indicative of the Mn atoms acting as substituents. © 2005 Elsevier B.V. All rights reserved.