| 1 | Incorporation, excitation and de-exciation of erbium in crystal silicon Dood, M. J. A. de; Kik, P. G.; Polman, A.; Shin, JungHoon, Materials Research Society, pp.219 - 225, 1996 |
| 2 | Ion irradiated amorphous silicon: a model approach to dynamics of defect creation and annihilation Atwater, Harry A.; Shin, JungHoon, Materials Research Society, 1993 |
| 3 | Suppression of crystal nucleation in amorphous silicon thin films by high energy ion irradiation at intermediate temperatures Shin, JungHoon; Im, James S.; Atwater, Harry A., Materials Research Society, pp.357 - 362, 1991 |
| 4 | Generalized Activation energy spectrum theory: new approach for modeling structural relaxation in amorphous solids Shin, JungHoon; Atwater, Harry A., Materials Research Society, 1993 |
| 5 | Dynamic changes in electrical conductivity of ion irradiated amorphous silicon Shin, JungHoon; Atwater, Harry A., Materials Research Society, pp.21 - 26, 1992 |
| 6 | Luminescence quenching in erbium-doped hydrogenated amorphous silicon Shin, JungHoon; Serna, R.; Hoven, G. N.; Polman, A.; Sark, W. G.; Vredenberg, A. M., Materials Research Society, pp.239 - 245, 1996 |
| 7 | Composition dependence of room temperature 1.5 mu m Er3+ luminescence from erbium doped silicon : oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition Shin, JungHoon; Kim, M.-J.; Seo, S.-Y.; Lee, Ch., Proceedings of the 1997 MRS Symposium, pp.275 - 280, MRS, 1997-12-01 |
| 8 | Long luminescence lifetime of 1.54 mu m Er3+ luminescence from erbium doped silicon rich silicon oxide and its origin Seo, Se-young; Shin, JungHoon; Lee, Choochon, Materials Research Society, pp.75 - 80, MRS, 1999-11 |
| 9 | Control of location and carrier-interaction of erbium using erbium-doped Si/SiO2 superlattice Han, H.-S.; Lee, W.-H.; Shin, JungHoon, Materials Research Society Symposium, pp.27 - 32, MRS, 1999-11-30 |
