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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors Choi, Sung-Jin; Moon, Dong-Il; Kim, Sung-Ho; Duarte, Juan P.; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.2, pp.125 - 127, 2011-02 | |
| Vertically Integrated Unidirectional Biristor Moon, Dong-Il; Choi, Sung-Jin; Kim, Sung-Ho; Oh, Jae-Sub; Kim, Young-Su; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.11, pp.1483 - 1485, 2011-11 | |
| Computational Study on the Performance of Si Nanowire pMOSFETs Based on the k . p Method Shin, Mincheol; Lee, S; Klimeck, G, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.9, pp.2274 - 2283, 2010-09 | |
| Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors Baek, David J.; Seol, Myeong-Lok; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.100, no.9, 2012-02 | |
| Performance Assessment of III-V Channel Ultra-Thin-Body Schottky-Barrier MOSFETs Lee, Jaehyun; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp.726 - 728, 2014-07 | |
| Moores law lives on - Ultra-thin body SOI and FinFET CMOS transistors look to continue Moores law for many years to come Chang, LL; Choi, Yang-Kyu; Kedzierski, J; Lindert, N; Xuan, PQ; Bokor, J; Hu, CM; King, TJ, IEEE CIRCUITS DEVICES, v.19, no.1, pp.35 - 42, 2003-01 | |
| Quantum simulation of device characteristics of silicon nanowire FETs Shin, Mincheol, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.6, no.2, pp.230 - 237, 2007-03 | |
| Damage immune field effect transistors with vacuum gate dielectric Han, Jin-Woo; Ahn, Jae-Hyuk; Choi, Yang-Kyu, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.29, no.1, pp.110141 - 110144, 2011-01 | |
| Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era Choi, Yang-Kyu; King, TJ; Hu, CM, SOLID-STATE ELECTRONICS, v.46, no.10, pp.1595 - 1601, 2002-10 | |
| Sub-50 nm p-channel FinFET Huang, XJ; Lee, WC; Kuo, C; Hisamoto, D; Chang, LL; Kedzierski, J; Anderson, E; Takeuchi, H; Choi, Yang-Kyu; Asano, K; Subramanian, V; King, TJ; Bokor, J; Hu, CM, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.880 - 886, 2001-05 |
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