Showing results 1 to 9 of 9
A New Charge-Pumping Technique for a Double-Gated SOI MOSFET Using Pulsed Drain Current Transients Kim, Sung-Ho; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.1, pp.241 - 246, 2012-01 |
A Novel Charge Pumping Technique With Gate-Induced Drain Leakage Current Lee, Geon-Beom; Kim, Jeong-Yeon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.44, no.5, pp.709 - 712, 2023-05 |
An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping Technique Kim, Sung-Ho; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.11, pp.3667 - 3673, 2011-11 |
Effect of Off-state Stress on Gate-Induced Drain Leakage by Interface Traps in Buried-Gate FETs Lee, Geon-Beom; Kim, Choong-Ki; Yoo, Min-Soo; Hur, Jae; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.12, pp.5126 - 5132, 2019-11 |
Electrical and interfacial characterization of atomic layer deposited high-kappa gate dielectrics on GaAs for advanced CMOS devices Dalapati, Goutam Kumar; Tong, Yi; Loh, Wei-Yip; Mun, Hoe Keat; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.8, pp.1831 - 1837, 2007-08 |
Hysteresis analysis in capacitance-voltage characteristics of Pt/(Ba,Sr)TiO3/Pt structures Kwak, DH; Jang, BT; Cha, SY; Lee, SH; Lee, Hee Chul; Yu, BG, INTEGRATED FERROELECTRICS, v.13, no.1-3, pp.413 - 419, 1996 |
Interface-Trap Analysis by an Optically Assisted Charge-Pumping Technique in a Floating-Body Device Kim, Sung-Ho; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.1, pp.84 - 86, 2011-01 |
Negative bias temperature instability on plasma-nitrided silicon dioxide film Ang, CH; Lek, CM; Tan, SS; Cho, Byung Jin; Chen, TP; Lin, WH; Zhen, JZ, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.41, no.3B, pp.314 - 316, 2002-03 |
Optically Assisted Charge Pumping on Floating-Body FETs Kim, Sung-Ho; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.12, pp.1365 - 1367, 2010-12 |
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