Browse "EE-Journal Papers(저널논문)" by Subject RELIABILITY
Showing results 1 to 29 of 29
| A Comparative Study on Hot-Carrier Injection in 5-story Vertically Integrated Inversion-Mode and Junctionless-Mode Gate-All-Around MOSFETs Kim, Seong-Yeon; Lee, Byung-Hyun; Hur, Jae; Park, Jun-Young; Jeon, Seung-Bae; Lee, Seung-Wook; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.39, no.1, pp.4 - 7, 2018-01 |
| A method of controlling the imprint effect in hafnia ferroelectric device Shin, Hunbeom; Gaddam, Venkateswarlu; Goh, Youngin; Jeong, Yeongseok; Kim, Giuk; Qin, Yixin; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.122, no.2, 2023-01 |
| A Proactive Plastic Deformation Method for Fine-Tuning of Metal-Based MEMS Devices After Fabrication Yoon, Yong Hoon; Han, Chang-Hoon; Lee, Jae Shin; Yoon, Jun-Bo, JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, v.27, no.6, pp.1124 - 1134, 2018-12 |
| Annealing behavior of gate oxide leakage current after quasi-breakdown Xu, Z; Cho, Byung Jin; Li, MF, MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346, 2000-10 |
| Atomic layer deposited high-kappa films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications Zhu, CX; Cho, Byung Jin; Li, MF, CHEMICAL VAPOR DEPOSITION, v.12, no.2-3, pp.165 - 171, 2006-03 |
| Correlation between interface traps and gate oxide leakage current in the direct tunneling regime Loh, WY; Cho, Byung Jin; Li, MF, APPLIED PHYSICS LETTERS, v.81, no.2, pp.379 - 381, 2002-07 |
| DC-PCM: Mitigating PCM Write Disturbance with Low Performance Overhead by Using Detection Cells Choi, Jungwhan; Jang, Jaemin; Kim, Lee-Sup, IEEE TRANSACTIONS ON COMPUTERS, v.68, no.12, pp.1741 - 1754, 2019-12 |
| Detection of a Nanoscale Hot Spot by Hot Carriers in a Poly-Si TFT Using Polydiacetylene-Based Thermoresponsive Fluorometry Choi, Ji-Min; Choi, Sung-Jin; Yarimaga, Oktay; Yoon, Bora; Kim, Jong-Man; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.5, pp.1570 - 1574, 2011-05 |
| Double Fault-Tolerant LLC Resonant Converter With Reconfiguration Method Kim, Taewoo; Choi, Seung-Hyun; Choi, Dongmin; Park, Jeong-Eon; Moon, Gun-Woo, IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, v.70, no.5, pp.4651 - 4661, 2023-05 |
| Effect of Off-state Stress on Gate-Induced Drain Leakage by Interface Traps in Buried-Gate FETs Lee, Geon-Beom; Kim, Choong-Ki; Yoo, Min-Soo; Hur, Jae; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.12, pp.5126 - 5132, 2019-11 |
| EM-Aware and Lifetime-Constrained Optimization for Multisegment Power Grid Networks Zhou, Han; Sun, Zeyu; Sadiqbatcha, Sheriff; Chang, Naehyuck; Tan, Sheldon X. -D., IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, v.27, no.4, pp.940 - 953, 2019-04 |
| Fluorine Effects Originating from the CVD W Process on Charge-Trap Flash Memory Cells Moon, Jung Min; Lee, Tae Yoon; Ahn, Hyunjun; Lee, Tae In; Hwang, Wan Sik; Cho, Byung-Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.1, pp.378 - 382, 2019-01 |
| FORMATION OF HIGH-QUALITY STORAGE CAPACITOR DIELECTRICS BY IN-SITU RAPID THERMAL REOXIDATION OF SI3N4 FILMS IN N2O AMBIENT Yoon, Giwan; LO, GQ; KIM, J; HAN, LK; KWONG, DL, IEEE ELECTRON DEVICE LETTERS, v.15, no.8, pp.266 - 268, 1994-08 |
| FORMATION OF HIGH-QUALITY ULTRATHIN OXIDE NITRIDE (ON) STACKED CAPACITORS BY IN-SITU MULTIPLE RAPID THERMAL-PROCESSING HAN, LK; Yoon, Giwan; KIM, J; YAN, J; KWONG, DL, IEEE ELECTRON DEVICE LETTERS, v.16, no.8, pp.348 - 350, 1995-08 |
| Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs Lek, CM; Cho, Byung Jin; Ang, CH; Tan, SS; Loh, WY; Zhen, JZ; Lap, C, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.17, no.6, pp.25 - 28, 2002-06 |
| Impact of nitrogen implantation into polysilicon followed by drive-in process on gate oxide integrity Cho, Byung Jin; Ko, LH; Nga, YA; Chan, LH, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.146, no.11, pp.4259 - 4262, 1999-11 |
| Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device Park, Jong-Kyung; Park, Young-Min; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; Cho, Byung-Jin, APPLIED PHYSICS LETTERS, v.96, no.22, 2010-05 |
| Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Iim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.10, pp.3314 - 3320, 2011-10 |
| Leakage current limit of time domain reflectometry in ultrathin dielectric characterization Kim, Yonghun; Baek, Seung Heon; Jeon, Chang Hoon; Lee, Young Gon; Kim, Jin Ju; Jung, Ukjin; Kang, Soo Cheol; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.8, pp.37 - 41, 2014-08 |
| Localized oxide degradation in ultrathin gate dielectric and its statistical analysis Loh, WY; Cho, Byung Jin; Li, MF; Chan, DSH; Ang, CH; Zheng, JZ; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.4, pp.967 - 972, 2003-04 |
| Metal-oxide-semiconductor characteristics of NH3-nitrided N2O-annealed oxides fabricated at reduced pressure Yoon, Giwan; Epstein, Y, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2045 - 2049, 2000-04 |
| Multihybrid job scheduling for fault-tolerant distributed computing in policy-constrained resource networks Moon, Yong-Hyuk; Youn, Chan-Hyun, COMPUTER NETWORKS, v.82, pp.81 - 95, 2015-05 |
| Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties Kim, Bong Ho; Kuk, Song-hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon, NANOSCALE ADVANCES, v.4, no.19, pp.4114 - 4121, 2022-09 |
| Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices Jeong, Yeongseok; Gaddam, Venkateswarlu; Goh, Youngin; Shin, Hunbeom; Lee, Sangho; Kim, Giuk; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.354 - 359, 2023-01 |
| Probabilistic schedulability analysis of harmonic multi-task systems with dual-modular temporal redundancy Kim, JK; Kim, Byung Kook, REAL-TIME SYSTEMS, v.26, pp.199 - 222, 2004-03 |
| Significance of gate oxide thinning below 1.5 nm on 1/f noise behavior in n-channel metal-oxide-semiconductor field-effect transistors under electrical stress Mheen, B; Kim, M; Song, YJ; Hong, Songcheol, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.6A, pp.4943 - 4947, 2006-06 |
| Stress-engineered palladium nanowires for wide range (0.1%-3.9%) of H-2 detection with high durability Lee, Jae Shin; Seo, Min-Ho; Choi, Kwang-Wook; Yoo, Jae-Young; Jo, Minseung; Yoon, Jun-Bo, NANOSCALE, v.11, no.35, pp.16317 - 16326, 2019-09 |
| Transient bit error recovery scheme for ROM-based embedded systems Ryu, Sang-Moon; Park, Dong-Jo, IEICE TRANSACTIONS ON INFORMATION AND SYSTEMS, v.E88D, no.9, pp.2209 - 2212, 2005-09 |
| Vertical-Pillar Ferroelectric Field-Effect-Transistor Memory Lee, Sangho; Kim, Giuk; Kim, Taeho; Eom, Taehyong; Jeon, Sanghun, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.16, no.10, 2022-10 |
Discover
Open Access
- 573 OA Article
Date issued
- 1,832 2020 - 2024
- 5,085 2010 - 2019
- 4,213 2000 - 2009
- 2,379 1990 - 1999
- 665 1980 - 1989