Showing results 1 to 16 of 16
Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool, NANOSCALE, v.10, no.32, pp.15205 - 15212, 2018-08 |
Atomically Thin Heterostructure with Gap-Mode Plasmon for Overcoming Trade-off between Photoresponsivity and Response Time Lee, Khang June; Park, Cheolmin; Jin, Hyeok Jun; Shin, Gwang Hyuk; Choi, Sung-Yool, Nano Research, v.14, no.5, pp.1305 - 1310, 2021-05 |
Atomically thin Schottky junction with a gap-mode plasmon for enhanced photoresponsivity in MoS2-based photodetectors Jin, Hyeok Jun; Lee, Khang June; Park, Cheol Min; Shin, Gwang Hyuk; Hong, Woonggi; Oh, Dongsik; Choi, Sung-Yool, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.54, no.14, pp.145301, 2021-04 |
Flexible and Transparent Thin Film Transistor Based on 2D Materials for Active-Matrix Display Park, Hamin; Oh, Dong Sik; Lee, Khang June; Jung, Dae Yool; Lee, Seunghee; Yoo, Seunghyup; Choi, Sung-Yool, ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.4749 - 4754, 2020-01 |
Gap‐Mode Plasmon‐Induced Photovoltaic Effect in a Vertical Multilayer Graphene Homojunction Lee, Khang June; Kwon, Kyungmok; Kim, Shinho; Hong, Woonggi; Park, Jung Hoon; Yu, Kyoungsik; Choi, Sung-Yool, ADVANCED OPTICAL MATERIALS, v.8, no.4, pp.1901519, 2020-02 |
High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS(2 )van der Waals Heterostructure Shin, Gwang Hyuk; Lee, Geon-Beom; An, Eun-Su; Park, Cheolmin; Jin, Hyeok Jun; Lee, Khang June; Oh, Dong-Sik; et al, ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.5106 - 5112, 2020-01 |
Large-Area CVD-Grown MoS2 Driver Circuit Array for Flexible Organic Light-Emitting Diode Display Woo, Youngjun; Hong, Woonggi; Yang, SangYoon; Kim, Ho jin; Cha, Jun-Hwe; Lee, Jae Eun; Lee, Khang June; et al, Advanced Electronic Materials, v.4, no.11, pp.1800251, 2018-11 |
Low-Power Nonvolatile Charge Storage Memory based on MoS2 and an Ultrathin Polymer Tunneling Dielectric Woo, Myung Hoon; Jang, Byung Chul; Choi, Junhwan; Lee, Khang June; Shin, Gwang Hyuk; Seong, Hyejeong; Im, Sung Gap; et al, ADVANCED FUNCTIONAL MATERIALS, v.27, no.43, pp.1703545, 2017-11 |
Multilayer Graphene with a Rippled Structure as a Spacer for Improving Plasmonic Coupling Lee, Khang June; Kim, Daewon; Jang, Byung Chul; Kim, Da-Jin; Park, Hamin; Jung, Dae Yool; 홍웅기; et al, ADVANCED FUNCTIONAL MATERIALS, v.26, no.28, pp.5093 - 5101, 2016-07 |
Observation of Wavelength-Dependent Quantum Plasmon Tunneling with Varying the Thickness of Graphene Spacer Lee, Khang June; Kim, Shinho; Hong, Woonggi; Park, Hamin; Jang, Min Seok; Yu, Kyoungsik; Choi, Sung-Yool, SCIENTIFIC REPORTS, v.9, pp.1199, 2019-02 |
Polymer-free graphene transfer for enhanced reliability of graphene field-effect transistors Park, Hamin; Park, Ick Joon; Jung, Dae Yool; Lee, Khang June; Yang, Sang Yoon; Choi, Sung-Yool, 2D MATERIALS, v.3, no.2, pp.021003, 2016-06 |
Probing temperature-dependent interlayer coupling in a MoS2/h-BN heterostructure Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool, Nano Research, v.13, no.2, pp.576 - 582, 2020-02 |
Si-MoS2 Vertical Heterojunction for Photodetector with High Responsivity and Low Noise Equivalent Power Shin, Gwang Hyuk; Park, Jung Hoon; Lee, Khang June; Lee, Geon-Beom; Jeon, Hyun Bae; Choi, Yang-Kyu; Yu, Kyoungsik; et al, ACS APPLIED MATERIALS & INTERFACES, v.11, no.7, pp.7626 - 7634, 2019-01 |
Ultrasensitive Phototransistor Based on WSe2-MoS2 van der Waals Heterojunction Shin, Gwang Hyuk; Park, Cheolmin; Lee, Khang June; Jin, Hyeok Jun; Choi, Sung-Yool, NANO LETTERS, v.20, no.8, pp.5741 - 5748, 2020-08 |
Ultrasensitive WSe2/alpha-In2Se3 NIR Photodetector Based on Ferroelectric Gating Effect Jin, Hyeok Jun; Park, Cheolmin; Lee, Khang June; Shin, Gwang Hyuk; Choi, Sung-Yool, ADVANCED MATERIALS TECHNOLOGIES, v.6, no.11, pp.2100494, 2021-11 |
Vertical-Tunneling Field-Effect Transistor Based on WSe2-MoS2 Heterostructure with Ion Gel Dielectric Jeon, Hyun Bae; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool, ADVANCED ELECTRONIC MATERIALS, v.6, no.7, pp.2000091, 2020-07 |
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