Vertical-Tunneling Field-Effect Transistor Based on WSe2-MoS2 Heterostructure with Ion Gel Dielectric

Cited 7 time in webofscience Cited 0 time in scopus
  • Hit : 102
  • Download : 0
A p-type tunneling field-effect transistor is demonstrated based on a van der Waals vertical heterostructure of WSe2 and MoS2, utilizing the ion gel dielectric as top gate. Band-to-band tunneling is achieved by modulating the band alignment of the heterojunction of WSe2 and MoS2 with gating the WSe2 channel through ion gel top gate. A fabricated tunneling field-effect transistor shows a minimum subthreshold swing of 36 mV dec(-1) and ON/OFF current ratio of 10(6) at room temperature. Furthermore, evidence of band-to-band tunneling is clearly confirmed through temperature dependent I-V characteristics. This work holds considerable promise for the low-power computational devices based on integrated circuits.
Publisher
WILEY
Issue Date
2020-07
Language
English
Article Type
Article
Citation

ADVANCED ELECTRONIC MATERIALS, v.6, no.7, pp.2000091

ISSN
2199-160X
DOI
10.1002/aelm.202000091
URI
http://hdl.handle.net/10203/278145
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 7 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0