Browse "EE-Journal Papers(저널논문)" by Author Kim, Sanghyeon
Showing results 1 to 25 of 25
| 200-mm Si CMOS Process-Compatible Integrated Passive Device Stack for Millimeter-Wave Monolithic 3-D Integration Park, Minsik; Song, Jonghyun; Jeong, Jaeyong; Lim, Jeong-Taek; Song, Jae-Hyeok; Lee, Won-Chul; Sim, Gapseop; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.10, pp.5257 - 5264, 2023-10 |
| Analysis of temperature-dependent I-V characteristics of the Au/n-GaSb Schottky diode Jang, Junho; Song, Jaeman; Lee, Seung-Seob; Jeong, Sangkwon; Lee, Bong Jae; Kim, Sanghyeon, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.131, 2021-08 |
| Atomic-scale mapper for superlattice photodetectors analysis Bidenko, Pavlo; Ahn, Seungyeop; Kang, Ko-Ku; Lee, Hyun-Jin; Kim, Young Ho; Kim, Sanghyeon, OPTICS EXPRESS, v.30, no.15, pp.27868 - 27883, 2022-07 |
| Capacitor-Less 4F(2) DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability Kim, Joon Pyo; Sim, Jaeho; Bidenko, Pavlo; Geum, Dae-Myeong; Kim, Seong Kwang; Shim, Joonsup; Kim, Jongmin; et al, IEEE ELECTRON DEVICE LETTERS, v.43, no.11, pp.1834 - 1837, 2022-11 |
| Comparative advantages of a type-II superlattice barrier over an AIGaSb barrier for enhanced performance of InAs/GaSb LWIR nBn photodetectors Lee, Hyun-Jin; Jang, Ahreum; Kim, Young Ho; Jung, Han; Bidenko, Pavlo; Kim, Sanghyeon; Kim, Minje; et al, OPTICS LETTERS, v.46, no.16, pp.3877 - 3880, 2021-08 |
| Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference Kim, Joon Pyo; Kim, Seong Kwang; Park, Seohak; Kuk, Song-hyeon; Kim, Taeyoon; Kim, Bong Ho; Ahn, Seong-Hun; et al, NANO LETTERS, v.23, no.2, pp.451 - 461, 2023-01 |
| Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Device for Monolithic 3D RF Applications Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Kim, Sanghyeon, IEEE ELECTRON DEVICE LETTERS, v.44, no.4, pp.598 - 601, 2023-04 |
| Electrical Analysis for Wafer-Bonded Interfaces of p(+)GaAs/n(+)InGaAs and p(+)InGaAs/n(+)InGaAs Geum, Dae-Myeong; Kim, Seong Kwang; Lim, Hyeong-Rak; Park, Juhyuk; Jeong, Jaeyong; Han, Jae Hoon; Choi, Won Jun; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.800 - 803, 2021-06 |
| Experimental demonstration of high-Q MRR based on a germanium-on-insulator platform with an yttria insulator in the mid-IR range Lim, Jinha; Shim, Joonsup; Kim, Inki; Kim, Sanghyeon, PHOTONICS RESEARCH, v.11, no.11, pp.A80 - A87, 2023-11 |
| Functionalized Bonding Materials and Interfaces for Heterogeneously Layer-Stacked Applications Kim, Sanghyeon; Han, Jae-Hoon; Choi, Won Jun; Song, Jin Dong; Kim, Hyung-jun, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.74, no.2, pp.82 - 87, 2019-01 |
| Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs Kim, Seong Kwang; Lim, Hyeong-Rak; Jeong, Jaejoong; Lee, Seung Woo; Jeong, Ho Jin; Park, Juhyuk; Kim, Joon Pyo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp.393 - 399, 2024-01 |
| Heterogeneous and Monolithic 3D Integration of III-V-Based Radio Frequency Devices on Si CMOS Circuits Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Kim, Duckhyun; Jo, Eunju; Jeong, Hakcheon; et al, ACS NANO, v.16, no.6, pp.9031 - 9040, 2022-06 |
Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review Kim, Younghyun; Han, Jae-Hoon; Ahn, Daehwan; Kim, Sanghyeon, MICROMACHINES, v.12, no.6, 2021-06 |
| High-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors Shim, Joonsup; Lim, Jinha; Geum, Dae-Myeong; You, Jong-Bum; Yoon, Hyeonho; Kim, Joon Pyo; Baek, Woo Jin; et al, OPTICS EXPRESS, v.30, no.23, pp.42663 - 42677, 2022-11 |
| Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on- Insulator n-MOSFETs Lim, Hyeong-Rak; Kim, Seongkwang; Han, Jae-Hoon; Kim, Hansung; Geum, Dae-Myeong; Lee, Yun-Joong; Ju, Byeong-Kwon; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1362 - 1365, 2019-09 |
| Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrode Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Kim, Hansung; Han, Jae-Hoon; Hwang, Do Kyung; Song, Jin Dong; et al, APPLIED PHYSICS LETTERS, v.115, no.14, 2019-09 |
| Intrinsic Thermomechanical Properties of Freestanding TEOS-SiO2 Thin Films Depending on Thickness Kim, Hyeongjun; Kim, Dong Jun; Kim, Joon Pyo; Baek, Woo Jin; Kim, Sanghyeon; Kim, Taek-Soo, ACS APPLIED ELECTRONIC MATERIALS, v.6, no.7, pp.5293 - 5300, 2024-07 |
| Large Polarization of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>x</sub> Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering Suh, Yoonje; Jeong, Jaeyong; Kim, Bong Ho; Kuk, Songhyeon; Kim, Seongkwang; Kim, Joon Pyo; Kim, Sanghyeon, IEEE ELECTRON DEVICE LETTERS, v.45, no.5, pp.766 - 769, 2024-05 |
| Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization Kuk, Songhyeon; Han, Seungmin; Lee, Dong Hyun; Kim, Bong Ho; Shim, Joonsup; Park, Min Hyuk; Han, Jae-Hoon; et al, IEEE ELECTRON DEVICE LETTERS, v.44, no.1, pp.36 - 39, 2023-01 |
| Monolithic GaAs/Si V-groove depletion-type optical phase shifters integrated in a 300 mm Si photonics platform Kim, Younghyun; Yudistira, Didit; Kunert, Bernardette; Baryshnikova, Marina; Alcotte, Reynald; Ozdemir, Cenk Ibrahim; Kim, Sanghyeon; et al, PHOTONICS RESEARCH, v.10, no.6, pp.1509 - 1516, 2022-06 |
| Simulation Study of a Monolithic III-V/Si V-Groove Carrier Depletion Optical Phase Shifter Kim, Sanghyeon; Kim, Younghyun; Ban, Yoojin; Pantouvaki, Marianna; Van Campenhout, Joris, IEEE JOURNAL OF QUANTUM ELECTRONICS, v.56, no.2, 2020-04 |
| Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Park, Juyeong; Jang, Jae-Hyung; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2205 - 2211, 2021-05 |
| Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation Geum, Dae-Myeong; Kim, Seong Kwang; Kang, Chang-Mo; Moon, Seung-Hyun; Kyhm, Jihoon; Han, JaeHoon; Lee, Dong-Seon; et al, NANOSCALE, v.11, no.48, pp.23139 - 23148, 2019-12 |
| Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED Park, Juhyuk; Baek, Woojin; Geum, Dae-Myeong; Kim, Sanghyeon, NANOSCALE RESEARCH LETTERS, v.17, no.1, 2022-03 |
| Vertical InGaAs Biristor for Sub-1 V Operation Kim, Wu-Kang; Bidenko, Pavlo; Kim, Jongmin; Sim, Jaeho; Han, Joon-Kyu; Kim, Seongkwang; Geum, Dae-Myeong; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.5, pp.681 - 683, 2021-05 |
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