Browse "EE-Journal Papers(저널논문)" by Author KWONG, DL
Showing results 1 to 12 of 12
| APPLICATIONS OF RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION TECHNOLOGY TO ULSI MATERIAL PROCESSING AND DEVICE FABRICATION SNNIKRISHNAN, U; Yoon, Giwan; KWONG, DL, THIN SOLID FILMS, v.241, no.1-2, pp.329 - 334, 1994-04 |
| EFFECTS OF GROWTH TEMPERATURE ON TDDB CHARACTERISTICS OF N2O-GROWN OXIDES Yoon, Giwan; JOSHI, AB; KIM, J; LO, GQ; KWONG, DL, IEEE ELECTRON DEVICE LETTERS, v.13, no.12, pp.606 - 608, 1992-12 |
| EFFECTS OF NH3 NITRIDATION ON OXIDES GROWN IN PURE N2O AMBIENT BHAT, M; Yoon, Giwan; KIM, J; KWONG, DL; ARENDT, M; WHITE, JM, APPLIED PHYSICS LETTERS, v.64, no.16, pp.2116 - 2118, 1994-04 |
| EFFECTS OF POST DEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS HAN, LK; Yoon, Giwan; KWONG, DL; MATHEWS, VK; FAZAN, PC, IEEE ELECTRON DEVICE LETTERS, v.15, no.8, pp.280 - 282, 1994-08 |
| EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS Yoon, Giwan; JOSHI, AB; KWONG, DL; MATHEWS, VK; THAKUR, RPS; FAZAN, PC, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.3, pp.347 - 351, 1994-03 |
| FORMATION OF HIGH-QUALITY STORAGE CAPACITOR DIELECTRICS BY IN-SITU RAPID THERMAL REOXIDATION OF SI3N4 FILMS IN N2O AMBIENT Yoon, Giwan; LO, GQ; KIM, J; HAN, LK; KWONG, DL, IEEE ELECTRON DEVICE LETTERS, v.15, no.8, pp.266 - 268, 1994-08 |
| FORMATION OF HIGH-QUALITY ULTRATHIN OXIDE NITRIDE (ON) STACKED CAPACITORS BY IN-SITU MULTIPLE RAPID THERMAL-PROCESSING HAN, LK; Yoon, Giwan; KIM, J; YAN, J; KWONG, DL, IEEE ELECTRON DEVICE LETTERS, v.16, no.8, pp.348 - 350, 1995-08 |
| HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT JOSHI, AB; Yoon, Giwan; KIM, JH; LO, GQ; KWONG, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.40, no.8, pp.1437 - 1445, 1993-08 |
| HIGH-FIELD-INDUCED LEAKAGE IN ULTRATHIN N2O OXIDES Yoon, Giwan; JOSHI, AB; KIM, J; KWONG, DL, IEEE ELECTRON DEVICE LETTERS, v.14, no.5, pp.231 - 233, 1993-05 |
| MOS CHARACTERISTICS OF NH3-NITRIDED N2O-GROWN OXIDES Yoon, Giwan; JOSHI, AB; KIM, J; KWONG, DL, IEEE ELECTRON DEVICE LETTERS, v.14, no.4, pp.179 - 181, 1993-04 |
| MOS CHARACTERISTICS OF ULTRATHIN NO-GROWN OXYNITRIDES BHAT, M; KIM, J; YAN, J; Yoon, Giwan; HAN, LK; KWONG, DL, IEEE ELECTRON DEVICE LETTERS, v.15, no.10, pp.421 - 423, 1994-10 |
| THICKNESS UNIFORMITY AND ELECTRICAL-PROPERTIES OF ULTRATHIN GATE OXIDES GROWN IN N2O AMBIENT BY RAPID THERMAL-PROCESSING Yoon, Giwan; JOSHI, AB; AHN, J; KWONG, DL, JOURNAL OF APPLIED PHYSICS, v.72, no.12, pp.5706 - 5710, 1992-12 |
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