MOS CHARACTERISTICS OF NH3-NITRIDED N2O-GROWN OXIDES

Abstract

In this paper, a new technique, namely NH3 nitridation of N2O oxides, is proposed and demonstrated to increase nitrogen concentration in N2O oxides so as to improve the resistance to boron penetration, without any adverse effects on electrical and reliability properties. Results show that NH3-nitrided N2O oxides show excellent electrical (low fixed charge) and reliability properties (smaller charge trapping and suppressed interface state generation), with an additional advantage of significantly improved resistance to boron penetration. This technique may have a great impact on deep-submicrometer dual-gate CMOS technology.