Browse "EE-Journal Papers(저널논문)" by Author Han, Jae-Hoon
Showing results 1 to 11 of 11
| An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode Kuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Baek, Seung-Hyub; Han, Jae-Hoon; Kim, Sang-Hyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.4, pp.2080 - 2087, 2022-04 |
| Epitaxial Lift-Off Technology for Large Size III-V-on-Insulator Substrate Lee, Subin; Kim, Seongkwang; Han, Jae-Hoon; Song, Jin Dong; Jun, Dong-Hwan; Kim, Sang-Hyeon, IEEE ELECTRON DEVICE LETTERS, v.40, no.11, pp.1732 - 1735, 2019-11 |
| Examination of Ferroelectric FET for "Cold" Nonvolatile Memory Kuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Kim, Joon Pyo; Kim, Seong-Kwang; Ahn, Seung-Yeop; Park, Min Hyuk; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.8, pp.4122 - 4127, 2023-08 |
| Functionalized Bonding Materials and Interfaces for Heterogeneously Layer-Stacked Applications Kim, Sanghyeon; Han, Jae-Hoon; Choi, Won Jun; Song, Jin Dong; Kim, Hyung-jun, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.74, no.2, pp.82 - 87, 2019-01 |
Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review Kim, Younghyun; Han, Jae-Hoon; Ahn, Daehwan; Kim, Sanghyeon, MICROMACHINES, v.12, no.6, 2021-06 |
| High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb Kim, Sang-Hyeon; Roh, Ilpyo; Han, Jae-Hoon; Geum, Dae-Myeong; Kim, Seong Kwang; Kang, Soo Seok; Kang, Hang-Kyu; et al, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.9, pp.42 - 48, 2021 |
| High-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors Shim, Joonsup; Lim, Jinha; Geum, Dae-Myeong; You, Jong-Bum; Yoon, Hyeonho; Kim, Joon Pyo; Baek, Woo Jin; et al, OPTICS EXPRESS, v.30, no.23, pp.42663 - 42677, 2022-11 |
| Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on- Insulator n-MOSFETs Lim, Hyeong-Rak; Kim, Seongkwang; Han, Jae-Hoon; Kim, Hansung; Geum, Dae-Myeong; Lee, Yun-Joong; Ju, Byeong-Kwon; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1362 - 1365, 2019-09 |
| Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrode Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Kim, Hansung; Han, Jae-Hoon; Hwang, Do Kyung; Song, Jin Dong; et al, APPLIED PHYSICS LETTERS, v.115, no.14, 2019-09 |
| Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization Kuk, Songhyeon; Han, Seungmin; Lee, Dong Hyun; Kim, Bong Ho; Shim, Joonsup; Park, Min Hyuk; Han, Jae-Hoon; et al, IEEE ELECTRON DEVICE LETTERS, v.44, no.1, pp.36 - 39, 2023-01 |
| Study on Charge-Enhanced Ferroelectric SIS Optical Phase Shifters Utilizing Negative Capacitance Effect Bidenko, Pavlo; Han, Jae-Hoon; Song, Jindong; Kim, Sang Hyeon, IEEE JOURNAL OF QUANTUM ELECTRONICS, v.56, no.6, 2020-12 |
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