Epitaxial Lift-Off Technology for Large Size III-V-on-Insulator Substrate

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III-V materials can be a very good channel candidate for monolithic 3D (M3D) integration due to the potential of high-performance and lower process temperature as compared with Si, since a low process temperature is crucial to avoid degradation of bottom devices. For III-V M3D integration, material transfer techniques are important, and such processes should be enabled by low process costs on a large wafer scale. In this study, we propose an InGaAs channel transfer technique by wafer bonding, epitaxial lift-off and III-V layers grown on Si substrate. Effective mobility of fabricated MOS HEMTs using transferred InGaAs layer was 1.3 times higher than that of Si MOSFETs. The proposing channel transfer technique would be useful for M3D integration because it provides wafer scalability, cost-effectiveness, back-gate biasing, and etc.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-11
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.40, no.11, pp.1732 - 1735

ISSN
0741-3106
DOI
10.1109/LED.2019.2944155
URI
http://hdl.handle.net/10203/268738
Appears in Collection
EE-Journal Papers(저널논문)
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