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Showing results 1 to 9 of 9

1
3D Stackable Cryogenic InGaAs HEMT-Based DC and RF Multiplexer/Demultiplexer for Large-Scale Quantum Computing

Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Lee, Jisung; Kim, Joon Pyo; Kim, Bong Ho; Suh, Yoon-Je; et al, 2022 International Electron Devices Meeting, IEDM 2022, pp.451 - 454, Institute of Electrical and Electronics Engineers Inc., 2022-12

2
3D stackable cryogenic InGaAs HEMTs for heterogeneous and monolithic 3D integrated highly scalable quantum computing systems

Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Lee, Jisung; Park, Seung-Young; Kim, Sanghyeon, IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, pp.328 - 329, Institute of Electrical and Electronics Engineers Inc., 2022-06

3
A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%)

Geum, Dae-Myeong; Lim, Jinha; Jang, Junho; Ahn, Seungyeop; Kim, SeongKwang; Shim, Joonsup; Kim, Bong Ho; et al, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, pp.413 - 414, Institute of Electrical and Electronics Engineers Inc., 2022-06

4
Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing

Jeong, Jaeyong; Kim, Seongkwang; Suh, Yoon-Je; Lee, Jisung; Choi, Joonyoung; Park, Juhyuk; Kim, Joon Pyo; et al, 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023, Institute of Electrical and Electronics Engineers Inc., 2023-06

5
Electrical characterization of wafer-bonded interfaces of p+InGaAs/n+InGaAs and p+GaAs/n+InGaAs

Geum, Dae-Myeong; Kim, Seongkwang; Lim, Hyeongrak; Park, Juhyuk; Jeong, Jaeyong; Han, JaeHoon; Choi, WonJun; et al, Global Photovoltaic Conference 2021, Korea Photovoltaic Society (KPVS), 2021-07-07

6
Heat management in monolithic 3D RF platform

Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Kim, Sanghyeon, 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, pp.79 - 81, Institute of Electrical and Electronics Engineers Inc., 2022-03

7
High-performance InGaAs-On-Insulator HEMTs on Si CMOS for Substrate Coupling Noise-free Monolithic 3D Mixed-Signal IC

Jeong, Jaeyong; Kim, Seongkwang; Kim, Jongmin; Geum, Daemyeong; Park Juyeong; Jang, Jae-Hyung; Kim, Sanghyeon, 2021 Symposia on VLSI Technology, IEEE, 2021-06-17

8
Monolithic 3D Integrated InGaAs HEMTs on Si for Next-Generation Communication: Record fMAX and Relaxed Self-Heating of Top Devices by a Novel M3D Structure

Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Kim, Sanghyeon, 2021 IEEE International Electron Devices Meeting, IEDM 2021, pp.11.2.1 - 11.2.4, Institute of Electrical and Electronics Engineers Inc., 2021-12

9
Role of Inter-Layer Dielectric on the Electrical and Heat Dissipation Characteristics in the Heterogeneous 3D Sequential CFETs with Ge pFETs on Si nFETs

Kim, Seongkwang; Lim, Hyeong-Rak; SHIM, JOONSUP; Baek, Woo Jin; Kim, Seongho; Park, YoungKeun; Jeong, Jaejoong; et al, 2023 International Electron Devices Meeting (IEDM), Institute of Electrical and Electronics Engineers Inc., 2023-12-11

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