Improvement of high mobility Al-doped InSnZnO back channel etch thin film transistor with double-layered passivation of SiO2/Al2O3

Abstract

N2O plasma treatment was performed to back channel of Al-doped InSnZnO (Al-ITZO). TFTs were passivated with SiO2 or SiO2/Al2O3. While subthreshold swing (S.S.) and hysteresis (hys.) of TFTs with SiO2 single layer were degraded after post-annealing. TFTs with SiO2/Al2O3 showed much better performance with 0.09 V/decade and 30.55 cm2/V-s. © 2015 Society for Information Display.