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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Improvement of high mobility Al-doped InSnZnO back channel etch thin film transistor with double-layered passivation of SiO2/Al2O3

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dc.contributor.authorJeon, Guk-Jinko
dc.contributor.authorLee, Kwang Heumko
dc.contributor.authorYeom, Hye-Inko
dc.contributor.authorNam, Yunyongko
dc.contributor.authorMun, Geum Biko
dc.contributor.authorKang, Il-Sukko
dc.contributor.authorPark, Sang-Hee Koko
dc.date.accessioned2023-10-20T07:00:42Z-
dc.date.available2023-10-20T07:00:42Z-
dc.date.created2023-10-20-
dc.date.issued2015-12-
dc.identifier.citation22nd International Display Workshops, IDW 2015, pp.138 - 139-
dc.identifier.urihttp://hdl.handle.net/10203/313610-
dc.description.abstractN2O plasma treatment was performed to back channel of Al-doped InSnZnO (Al-ITZO). TFTs were passivated with SiO2 or SiO2/Al2O3. While subthreshold swing (S.S.) and hysteresis (hys.) of TFTs with SiO2 single layer were degraded after post-annealing. TFTs with SiO2/Al2O3 showed much better performance with 0.09 V/decade and 30.55 cm2/V-s. © 2015 Society for Information Display.-
dc.languageEnglish-
dc.publisherInternational Display Workshops-
dc.titleImprovement of high mobility Al-doped InSnZnO back channel etch thin film transistor with double-layered passivation of SiO2/Al2O3-
dc.typeConference-
dc.identifier.scopusid2-s2.0-85056408473-
dc.type.rimsCONF-
dc.citation.beginningpage138-
dc.citation.endingpage139-
dc.citation.publicationname22nd International Display Workshops, IDW 2015-
dc.identifier.conferencecountryJA-
dc.identifier.conferencelocationOtsu-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorMun, Geum Bi-
dc.contributor.nonIdAuthorKang, Il-Suk-
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MS-Conference Papers(학술회의논문)
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