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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Highly stable top gate top contact ITZO TFT deposited by using high density plasma sputtering

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Ahn, Jae Han / Lee, Kwang Heum / Do, Jae Chul / Park, Wan Woo / Park, Sang-Hee Koresearcher
Top gate top contact (TGTC) structured thin film transistors with In-Sn-Zn-O active layer deposited by high density plasma sputtering (HDP) have been successfully fabricated. The HDP ITZO TFT achieved saturation mobility of 27.8cm
Publisher
Institute of Electrical and Electronics Engineers Inc.
Issue Date
2016-07
Language
English
Citation

23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016, pp.183 - 184

DOI
10.1109/AM-FPD.2016.7543658
URI
http://hdl.handle.net/10203/312871
Appears in Collection
MS-Conference Papers(학술회의논문)
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