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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Highly stable top gate top contact ITZO TFT deposited by using high density plasma sputtering

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dc.contributor.authorAhn, Jae Hanko
dc.contributor.authorLee, Kwang Heumko
dc.contributor.authorDo, Jae Chulko
dc.contributor.authorPark, Wan Wooko
dc.contributor.authorPark, Sang-Hee Koko
dc.date.accessioned2023-09-22T06:00:33Z-
dc.date.available2023-09-22T06:00:33Z-
dc.date.created2023-09-22-
dc.date.issued2016-07-
dc.identifier.citation23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016, pp.183 - 184-
dc.identifier.urihttp://hdl.handle.net/10203/312871-
dc.description.abstractTop gate top contact (TGTC) structured thin film transistors with In-Sn-Zn-O active layer deposited by high density plasma sputtering (HDP) have been successfully fabricated. The HDP ITZO TFT achieved saturation mobility of 27.8cm-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleHighly stable top gate top contact ITZO TFT deposited by using high density plasma sputtering-
dc.typeConference-
dc.identifier.wosid000389600900058-
dc.identifier.scopusid2-s2.0-84987615746-
dc.type.rimsCONF-
dc.citation.beginningpage183-
dc.citation.endingpage184-
dc.citation.publicationname23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016-
dc.identifier.conferencecountryJA-
dc.identifier.conferencelocationKyoto-
dc.identifier.doi10.1109/AM-FPD.2016.7543658-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorAhn, Jae Han-
dc.contributor.nonIdAuthorLee, Kwang Heum-
dc.contributor.nonIdAuthorDo, Jae Chul-
dc.contributor.nonIdAuthorPark, Wan Woo-
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MS-Conference Papers(학술회의논문)
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