Effect of Trap on Carrier Transport in InAs FET with Al2O3 Oxide: DFT-based NEGF simulations

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 206
  • Download : 0
To accurately assess the effect of trap on the performance of field effect transistors (FETs), atom-level first-principles modeling of channel/oxide/trap and rigorous quantum mechanical transport calculations are necessary. In this work we have developed an innovative approach to solve the challenging problem efficiently. Non-equilibrium Green's function simulation of InAs FET with a trap in the channel/oxide interface that is atomically modeled by using the density functional theory is demonstrated.
Publisher
Atomera,et al.,GTS,Infineon,Leti - Cea Tech,Samsung
Issue Date
2019-09-05
Language
English
Citation

24th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp.303 - 306

ISSN
1946-1569
DOI
10.1109/SISPAD.2019.8870567
URI
http://hdl.handle.net/10203/268585
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0