DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Mincheol | ko |
dc.contributor.author | Cho, Yucheol | ko |
dc.contributor.author | Jeon, Seong Hyeok | ko |
dc.date.accessioned | 2019-11-26T03:21:01Z | - |
dc.date.available | 2019-11-26T03:21:01Z | - |
dc.date.created | 2019-11-26 | - |
dc.date.created | 2019-11-26 | - |
dc.date.created | 2019-11-26 | - |
dc.date.issued | 2019-09-05 | - |
dc.identifier.citation | 24th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp.303 - 306 | - |
dc.identifier.issn | 1946-1569 | - |
dc.identifier.uri | http://hdl.handle.net/10203/268585 | - |
dc.description.abstract | To accurately assess the effect of trap on the performance of field effect transistors (FETs), atom-level first-principles modeling of channel/oxide/trap and rigorous quantum mechanical transport calculations are necessary. In this work we have developed an innovative approach to solve the challenging problem efficiently. Non-equilibrium Green's function simulation of InAs FET with a trap in the channel/oxide interface that is atomically modeled by using the density functional theory is demonstrated. | - |
dc.language | English | - |
dc.publisher | Atomera,et al.,GTS,Infineon,Leti - Cea Tech,Samsung | - |
dc.title | Effect of Trap on Carrier Transport in InAs FET with Al2O3 Oxide: DFT-based NEGF simulations | - |
dc.type | Conference | - |
dc.identifier.wosid | 000651583400077 | - |
dc.identifier.scopusid | 2-s2.0-85074347101 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 303 | - |
dc.citation.endingpage | 306 | - |
dc.citation.publicationname | 24th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) | - |
dc.identifier.conferencecountry | IT | - |
dc.identifier.conferencelocation | Palazzo di Toppo Wassermann, Udine | - |
dc.identifier.doi | 10.1109/SISPAD.2019.8870567 | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.contributor.nonIdAuthor | Cho, Yucheol | - |
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