Suppression of Self-Heating Effects in 3-D V-NAND Flash Memory Using a Plugged Pillar-Shaped Heat Sink

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Self-heating effects (SHEs) in 3-DV-NAND flash memory are investigated using simulations. First, temperature increase is estimated during the read operation, and a hot spot region along the bit-line is identified. Then, a novel bilayered macaroni filler is proposed to relieve the SHEs. A highly thermally conductive layer is plugged into the macaroni oxide filler as a heat sink. The heat dissipation efficiency is improved by up to 21% in the proposed structure. As a result, the reliability issues induced by SHEs can be avoided in V-NAND flash.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-02
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.40, no.2, pp.212 - 215

ISSN
0741-3106
DOI
10.1109/LED.2018.2889037
URI
http://hdl.handle.net/10203/251503
Appears in Collection
EE-Journal Papers(저널논문)
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