Low-Temperature Deterministic Growth of Ge Nanowires Using Cu Solid Catalysts

Cited 68 time in webofscience Cited 0 time in scopus
  • Hit : 385
  • Download : 0
Cu-Catalytic Growth of Ge Nanowires: Low temperature, deterministic growth characteristics are available by the Cu-catalytic growth. The low-temperature growth is accessible at as low as 200 degrees C on polymer substrates, and the epitaxial growth is also possible on single-crystalline substrates with the narrow diameter distribution of 7 nm, directly templated from those of Cu catalysts.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2008-12
Language
English
Article Type
Article
Keywords

SILICON NANOWIRES; SI NANOWIRES; MECHANISM; NANOCRYSTALS

Citation

ADVANCED MATERIALS, v.20, no.24, pp.4684 - +

ISSN
0935-9648
DOI
10.1002/adma.200801764
URI
http://hdl.handle.net/10203/238890
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 68 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0