Low-Temperature Deterministic Growth of Ge Nanowires Using Cu Solid Catalysts

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dc.contributor.authorKang, Kibumko
dc.contributor.authorKim, Dong Anko
dc.contributor.authorLee, Hyun-Seimgko
dc.contributor.authorKim, Cheol-Jooko
dc.contributor.authorYang, Jee-Eunko
dc.contributor.authorJo, Moon-Hoko
dc.date.accessioned2018-01-30T04:23:50Z-
dc.date.available2018-01-30T04:23:50Z-
dc.date.created2018-01-09-
dc.date.created2018-01-09-
dc.date.issued2008-12-
dc.identifier.citationADVANCED MATERIALS, v.20, no.24, pp.4684 - +-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10203/238890-
dc.description.abstractCu-Catalytic Growth of Ge Nanowires: Low temperature, deterministic growth characteristics are available by the Cu-catalytic growth. The low-temperature growth is accessible at as low as 200 degrees C on polymer substrates, and the epitaxial growth is also possible on single-crystalline substrates with the narrow diameter distribution of 7 nm, directly templated from those of Cu catalysts.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectSILICON NANOWIRES-
dc.subjectSI NANOWIRES-
dc.subjectMECHANISM-
dc.subjectNANOCRYSTALS-
dc.titleLow-Temperature Deterministic Growth of Ge Nanowires Using Cu Solid Catalysts-
dc.typeArticle-
dc.identifier.wosid000262292200008-
dc.identifier.scopusid2-s2.0-58049175069-
dc.type.rimsART-
dc.citation.volume20-
dc.citation.issue24-
dc.citation.beginningpage4684-
dc.citation.endingpage+-
dc.citation.publicationnameADVANCED MATERIALS-
dc.identifier.doi10.1002/adma.200801764-
dc.contributor.localauthorKang, Kibum-
dc.contributor.nonIdAuthorKim, Dong An-
dc.contributor.nonIdAuthorLee, Hyun-Seimg-
dc.contributor.nonIdAuthorKim, Cheol-Joo-
dc.contributor.nonIdAuthorYang, Jee-Eun-
dc.contributor.nonIdAuthorJo, Moon-Ho-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSILICON NANOWIRES-
dc.subject.keywordPlusSI NANOWIRES-
dc.subject.keywordPlusMECHANISM-
dc.subject.keywordPlusNANOCRYSTALS-
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