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Browse "RIMS Collection" by Author Takenaka, Mitsuru

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1	Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, JOURNAL OF APPLIED PHYSICS, v.114, no.16, 2013-10
2	Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors Kim, SangHyeon; Ikku, Yuki; Yokoyama, Masafumi; Nakane, Ryosho; Li, Jian; Kao, Yung-Chung; Takenaka, Mitsuru; et al, APPLIED PHYSICS LETTERS, v.105, no.4, 2014-07
3	Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; et al, APPLIED PHYSICS EXPRESS, v.5, no.1, 2012-01
4	Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sung-Hoon; Nakane, Ryosho; Urabe, Yuji; et al, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.12, no.4, pp.621 - 628, 2013-07
5	Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, APPLIED PHYSICS LETTERS, v.104, no.26, 2014-06
6	Formation of III-V-on-insulator structures on Si by direct wafer bonding Yokoyama, Masafumi; Iida, Ryo; Ikku, Yuki; Kim, Sanghyeon; Takagi, Hideki; Yasuda, Tetsuji; Yamada, Hisashi; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.28, no.9, 2013-09
7	High I-on/I-off and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions Noguchi, Munetaka; Kim, SangHyeon; Yokoyama, Masafumi; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, JOURNAL OF APPLIED PHYSICS, v.118, no.4, 2015-07
8	High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V-th Tunability Kim, Sang-Hyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.5, pp.1354 - 1360, 2014-05
9	High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.10, pp.3342 - 3350, 2013-10
10	III-V/Ge channel MOS device technologies in nano CMOS era Takagi, Shinichi; Zhang, Rui; Suh, Junkyo; Kim, Sang-Hyeon; Yokoyama, Masafumi; Nishi, Koichi; Takenaka, Mitsuru, JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.6, 2015-06
11	Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InxGa1-xAs Metal-Oxide-Semiconductor Field Effect Transistors Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; et al, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.13, no.4, pp.456 - 462, 2013-12
12	Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; et al, APPLIED PHYSICS LETTERS, v.103, no.14, 2013-09
13	Influence of interface traps inside the conduction band on the capacitance-voltage characteristics of InGaAs metal-oxide-semiconductor capacitors Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Iida, Ryo; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS EXPRESS, v.9, no.11, 2016-11
14	Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation Kim, SangHyeon; Yokoyama, Masafumi; Ikku, Yuki; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; et al, APPLIED PHYSICS LETTERS, v.104, no.11, 2014-03
15	Self-Aligned Metal Source/Drain InxGa1-x As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; et al, APPLIED PHYSICS EXPRESS, v.4, no.2, 2011-02
16	Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors Yokoyama, Masafumi; Nishi, Koichi; Kim, Sanghyeon; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS LETTERS, v.104, no.9, 2014-03
17	Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; et al, APPLIED PHYSICS LETTERS, v.100, no.19, 2012-05
18	Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys Nishi, Koichi; Yokoyama, Masafumi; Kim, Sanghyeon; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi, JOURNAL OF APPLIED PHYSICS, v.115, no.3, 2014-01
19	Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability Kim, Sanghyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.8, pp.2512 - 2517, 2013-08
20	Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications Kim, Minsoo; Kim, Younghyun; Yokoyama, Masafumi; Nakane, Ryosho; Kim, SangHyeon; Takenaka, Mitsuru; Takagi, Shinichi, THIN SOLID FILMS, v.557, pp.298 - 301, 2014-04

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