Investigation on the Hump Effect Utilizing the Capacitance Voltage Characteristics of a-InGaZnO Thin Film Transistor

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As well as a parallel shift, the hump effect is also found in the transfer curve of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs) after gate bias stress. The capacitance voltage (C-V) curve is also deformed from its initial shape after the stress. This study analyzes both the C-V and transfer curves based on the same gate voltage axis to investigate the mechanism driving the hump generation. The origin of the hump effect seems to have little relationship with the electron trapping in the gate insulator. It is deduced that an additional interface trap generation occurs at the a-IGZO interface during gate bias stress test, thereby explaining the origin of the hump effect.
Publisher
AMER SCIENTIFIC PUBLISHERS
Issue Date
2017-11
Language
English
Article Type
Article
Keywords

CHANNEL; DIELECTRICS

Citation

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.11, pp.8545 - 8548

ISSN
1533-4880
DOI
10.1166/jnn.2017.15169
URI
http://hdl.handle.net/10203/227191
Appears in Collection
MS-Journal Papers(저널논문)
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