Showing results 6 to 10 of 10
Integrity of gate oxides irradiated under electron-beam lithography conditions Cho, Byung Jin; Chong, PF; Chor, EF; Joo, MS; Yeo, IS, Extended Abstract of the 1999 International Conf. on Solid State Devices and Materials (SSDM), pp.182 - 182, 1999-09-08 |
Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions Chong, PF; Cho, Byung Jin; Chor, EF; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2181 - 2185, 2000-04 |
Isolation process induced wafer warpage Jang, SA; Yeo, IS; Kim, YB; Cho, Byung Jin; Lee, SK, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.1, no.1, pp.46 - 48, 1998-07 |
Radiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions Cho, Byung Jin; Kim, SJ; Ling, CH; Joo, MS; Yeo, IS, Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, pp.30 - 30, 1999-07-05 |
Reliability of thin gate oxides irradiated under X-ray lithography conditions Cho, Byung Jin; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4B, pp.2819 - 2822, 2001-04 |
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