Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions

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The effect of Electron-beam irradiation on the reliability of ultra-thin gate oxide has been studied under typical Electron-beam lithography conditions. A large increase of low-field excess leakage current was observed on irradiated oxides, which was found to be very similar to the electrical stress-induced leakage currents. An experimental relationship between the total Electron-beam dosage and the equivalent charge fluence, which induces the same amount of current degradation, has been established for different oxide thickness. This allows for easier prediction of radiation damage. It has also been found that Electron-beam irradiation generates much larger amount of oxide bulk traps but generates a comparable amount of interface states, compared to electrical stress. Quasi-breakdown characteristics show that Electron-beam irradiation up to a dose of 500 mu C/cm(2) does not accelerate quasi-breakdown of ultra-thin gate oxide.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
2000-04
Language
English
Article Type
Article; Proceedings Paper
Keywords

INDUCED LEAKAGE CURRENT; DEPENDENCE; THICKNESS

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.4B, pp.2181 - 2185

ISSN
0021-4922
DOI
10.1143/JJAP.39.2181
URI
http://hdl.handle.net/10203/74159
Appears in Collection
EE-Journal Papers(저널논문)
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