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Showing results 1 to 8 of 8

1
DRAM-Latency Optimization Inspired by Relationship between Row-Access Time and Refresh Timing

Shin, Wongyu; Choi, Jungwhan; Jang, Jaemin; Suh, Jinwoong; Moon, Youngsuk; Kwon, Yongkee; Kim, Lee-Sup, IEEE TRANSACTIONS ON COMPUTERS, v.65, no.10, pp.3027 - 3040, 2016-10

2
Energy Efficient Data Encoding in DRAM channels exploiting Data Value Similarity

Seol, Hoseok; Shin, Wongyu; Jang, Jaemin; Choi, Jungwhan; Suh, Jinwoong; Kim, Lee-Sup, 2016 ACM/IEEE International Symposium on Computer Architecture, pp.719 - 730, ACM SIGGRAPH and IEEE TCCA, 2016-06-22

3
In-DRAM Data Initialization

Seol, Hoseok; Shin, Wongyu; Jang, Jaemin; Choi, Jungwhan; Suh, Jinwoong; Kim, Lee-Sup, IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, v.25, no.11, pp.3251 - 3254, 2017-11

4
Multiple Clone Row DRAM: A Low Latency and Area Optimizded DRAM

Choi, Jungwhan; Shin, wongyu; Jang, Jaemin; Suh, Jinwoong; Kwon, Yongkee; Moon, Youngsuk; Kim, Lee-Sup, 2015 ACM/IEEE International Symposium on Computer Architecture, ACM SIGGRAPH and IEEE TCCA, 2015-06-15

5
Multiple clone row DRAM: A low latency and area optimized DRAM

Choi, Jungwhan; Shin, Wongyu; Jang, Jaemin; Suh, Jinwoong; Kwon, Yongkee; Moon, Youngsuk; Kim, Lee-Sup, 42nd Annual International Symposium on Computer Architecture, ISCA 2015, pp.223 - 234, Institute of Electrical and Electronics Engineers Inc., 2015-06

6
Q-DRAM: Quick-Access DRAM with Decoupled Restoring from Row-Activation

Shin, Wongyu; Choi, Jung Whan; Jang, Jaemin; Suh, Jinwoong; Kwon, Yongkee; Moon, Youngsuk; Kim, Hongsik; et al, IEEE TRANSACTIONS ON COMPUTERS, v.65, no.7, pp.2213 - 2227, 2016-07

7
Rank-Level Parallelism in DRAM

Shin, Wongyu; Jang, Jaemin; Choi, Jungwhan; Suh, Jinwoong; Kwon, Yongkee; Moon, Youngsuk; Kim, Lee-Sup, IEEE TRANSACTIONS ON COMPUTERS, v.66, no.7, pp.1274 - 1280, 2017-07

8
Refresh-Aware Write Recovery Memory Controller

Jang, Jaemin; Shin, Wongyu; Choi, Jungwhan; Suh, Jinwoong; Kwon, Yongkee; Kim, Yongju; Kim, Lee-Sup, IEEE TRANSACTIONS ON COMPUTERS, v.66, no.4, pp.688 - 701, 2017-04

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