Browse "School of Electrical Engineering(전기및전자공학부)" by Author Park, Jun-Young
Showing results 53 to 61 of 61
| Thermal hardware-based data security device that permanently erases data by using local heat generation phenomenon and method thereof Choi, Yang-Kyu; Park, Jun-Young |
| Three-Dimensional Fin-Structured Semiconducting Carbon Nanotube Network Transistor Lee, Dong-Il; Lee, Byung-Hyun; Yoon, Jinsu; Ahn, Dae-Chul; Park, Jun-Young; Hur, Jae; Kim, Myung-Su; et al, ACS NANO, v.10, no.12, pp.10894 - 10900, 2016-12 |
| Threshold Voltage Tuning Technique in Gate-All-Around MOSFETs by Utilizing Gate Electrode With Potential Distribution Park, Jun-Young; Bae, Hagyoul; Moon, Dong-Il; Jeon, Chang-Hoon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.37, no.11, pp.1391 - 1394, 2016-11 |
| Triboelectric nanogenerator for a repairable transistor with self-powered electro-thermal annealing Kim, Weon-Guk; Han, Joon-Kyu; Tcho, Il-Woong; Park, Jun-Young; Yu, Ji-Man; Choi, Yang-Kyu, NANO ENERGY, v.76, pp.105000, 2020-10 |
| Tunneling field-effect transistor with a plurality of nano-wires and fabrication method thereof Choi, Yang-Kyu; Park, Jun-Young, 2018-06-12 |
| Ultra-Fast Erase Method of SONOS Flash Memory by Instantaneous Thermal Excitation Ahn, Dae-Chul; Seol, Myeong-Lok; Hur, Jae; Moon, Dong-Il; Lee, Byung-Hyun; Han, Jin-Woo; Park, Jun-Young; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.2, pp.190 - 192, 2016-02 |
| Vertically Integrated zRAM (VI-zRAM): Toward Extremely Scaled Memory Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Bang, Te-Wook; Bae, Hagyoul; Park, Jun-Young; et al, ECS PRIME, ECS PRIME, 2016-10-05 |
| Vertically-integrated 3-dimensional flash memory for high reliable flash memory and fabrication method thereof Choi, Yang-Kyu; Park, Jun-Young |
| 트랜지스터 손상 치료 방법 및 이를 이용한 디스플레이 장치 최양규; Kim, Choong-Ki; Bae, Hagyoul; Park, Jun-Young, 2018-10-01 |
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