Vertically Integrated zRAM (VI-zRAM): Toward Extremely Scaled Memory

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This paper discusses the demonstration of a vertically integrated gate-all-around (GAA) silicon nanowire (SiNW) channel-based dynamic random access memory (DRAM) without a cell-capacitor as a breakthrough for conventional DRAM scaling. Owing to the one-route all-dry etching process (ORADEP) with stiction-free stability and process simplicity, vertical integration of multiple silicon nanowire was achieved with high uniformity and high reproducibility. Finally, high performance suitable for further scaling was presented in zero-capacitor DRAM (ZRAM) operable with up to five-story SiNW channels without sacrificing scalability.
Publisher
ECS PRIME
Issue Date
2016-10-05
Language
English
Citation

ECS PRIME

URI
http://hdl.handle.net/10203/215114
Appears in Collection
EE-Conference Papers(학술회의논문)
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