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Showing results 1 to 6 of 6

1
(A) study on the effect of aluminum on an indium-aluminum oxide semiconductors deposited by PEALD to control the electrical and structural characteristics = 전기적 및 구조적 특성 조정을 위한, 원자층 증착법으로 증착된 인듐-알루미늄 산화물 반도체에 함유되는 알루미늄의 역할에 대한 연구link

Mun, Geumbi; 문금비; et al, 한국과학기술원, 2016

2
Effects of Al Precursors on the Characteristics of Indium-Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition

Lee, Seunghee; Kim, Miso; Mun, Geumbi; Ko, Jongbeom; Yeom, Hye-In; Lee, Gwang-Heum; Shong, Bonggeun; et al, ACS APPLIED MATERIALS & INTERFACES, v.13, no.33, pp.40134 - 40144, 2021-08

3
High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

Yeom, Hye-In; Ko, Jong Beom; Mun, Geumbi; Park, Sang-Hee Ko, JOURNAL OF MATERIALS CHEMISTRY C, v.4, no.28, pp.6873 - 6880, 2016-06

4
Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Kim, Hyo Yeon; Jung, Eun Ae; Mun, Geumbi; Agbenyeke, Raphael E.; Park, Bo Keun; Park, Jin-Seong; Son, Seung Uk; et al, ACS APPLIED MATERIALS & INTERFACES, v.8, no.40, pp.26924 - 26931, 2016-10

5
Outstanding Performance as Cu Top Gate IGZO TFT With Large Trans-Conductance Coefficient by Adopting Double-Layered Al2O3/SiNx Gate Insulator

Kim, Yujin; Lee, Kwang Heum; Mun, Geumbi; Park, Kyeongwoo; Park, Sang-Hee Ko, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.214, no.12, 2017-12

6
Top gate high mobility oxide TFT with double layered gate insulator

Kim, Yujin; Park, Kyoungwoo; Ko, Jong-Beom; Mun, Geumbi; Park, Sang-Hee Ko, 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016, pp.779 - 781, Society for Information Display, 2016-12

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