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1
89-GHZFT ROOM-TEMPERATURE SILICON MOSFETS

YAN, RH; LEE, KF; Jeon, DukYoung; KIM, YO; PARK, BG; PINTO, MR; TENNANT, DM; et al, IEEE ELECTRON DEVICE LETTERS, v.13, no.5, pp.256 - 258, 1992-05

2
AN ULTRA-HIGH-SPEED ECL-BICMOS TECHNOLOGY WITH SILICON FILLET SELF-ALIGNED CONTACTS

LIU, TYM; CHIN, GM; Jeon, DukYoung; MORRIS, MD; ARCHER, VD; JOHNSON, RW; TARSIA, M; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.9, pp.1546 - 1555, 1994-09

3
GATE TECHNOLOGY FOR 0.1-MU-M SI COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR USING G-LINE EXPOSURE AND DEEP-ULTRAVIOLET HARDENING

Jeon, DukYoung; CHIN, GM; LEE, KF; YAN, RH; WESTERWICK, E; CERULLO, M, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.12, no.4, pp.2800 - 2804, 1994

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