89-GHZFT ROOM-TEMPERATURE SILICON MOSFETS

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We report the implementation of deep-submicrometer Si MOSFET's that at room temperature have a unity-current-gain cutoff frequency (f(T)) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 angstrom, and a channel length of 0.15-mu-m. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1992-05
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.13, no.5, pp.256 - 258

ISSN
0741-3106
DOI
10.1109/55.145045
URI
http://hdl.handle.net/10203/65116
Appears in Collection
MS-Journal Papers(저널논문)
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