89-GHZFT ROOM-TEMPERATURE SILICON MOSFETS

Abstract

We report the implementation of deep-submicrometer Si MOSFET's that at room temperature have a unity-current-gain cutoff frequency (f(T)) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 angstrom, and a channel length of 0.15-mu-m. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region.