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Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Author Byun, Chun-Won

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Showing results 1 to 18 of 18

1	Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States Shin, Jae-Heon; Hwang, Chi-Sun; Cheong, Woo-Seok; Park, Sang-Hee Ko; Cho, Doo-Hee; Ryu, Minki; Yoon, Sung-Min; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.1, pp.527 - 530, 2009-01
2	Channel Protection Layer Effect on the Performance of Oxide TFTs Park, Sang-Hee Ko; Cho, Doo-Hee; Yang, Shinhyuk; Ryu, Min Ki; Hwang, Chi-Sun; Yoon, Sung Min; Cheong, Woo-Seok; et al, ETRI JOURNAL, v.31, no.6, pp.653 - 659, 2009-12
3	Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors Yoon, Sung-Min; Yang, Shin-Hyuk; Byun, Chun-Won; Park, Sang-Hee Ko; Jung, Soon-Won; Cho, Doo-Hee; Kang, Seung-Youl; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.4, 2010
4	Effect of Double-Layered Al2O3 Gate Insulator on the Bias Stability of ZnO Thin Film Transistors Yoon, Sung-Min; Park, Sang-Hee Ko; Yang, Shin-Hyuk; Byun, Chun-Won; Hwang, Chi-Sun, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.8, pp.264 - 267, 2010
5	Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer Yoon, Sung-Min; Yang, Shin-Hyuk; Park, Sang-Hee Ko; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; et al, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.24, 2009-12
6	Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors Cheong, Woo-Seok; Lee, Jeong-Min; Yoon, Sung Min; Lee, Jong-Ho; Yang, Shinhyuk; Chung, Sung Mook; Cho, Kyoung Ik; et al, ETRI JOURNAL, v.31, no.6, pp.660 - 666, 2009-12
7	Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications Yoon, Sung-Min; Park, Sang-Hee Ko; Byun, Chun-Won; Yang, Shin-Hyuk; Hwang, Chi-Sun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.7, pp.727 - 733, 2010
8	Environmentally Stable Transparent Organic/Oxide Hybrid Transistor Based on an Oxide Semiconductor and a Polyimide Gate Insulator Yang, Shinhyuk; Lee, Jeong-Ik; Park, Sang-Hee Ko; Cheong, Woo-Seok; Cho, Doo-Hee; Yoon, Sung-Min; Byun, Chun-Won; et al, IEEE ELECTRON DEVICE LETTERS, v.31, no.5, pp.446 - 448, 2010-05
9	Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors Cheong, Woo-Seok; Hwang, Chi-Sun; Shin, Jae-Heon; Park, Sang-Hee Ko; Yoon, Sung-Min; Cho, Doo-Hee; Ryu, Minki; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.1, pp.473 - 477, 2009-01
10	Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor Yoon, Sung-Min; Yang, Shin-Hyuk; Jung, Soon-Won; Byun, Chun-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; Lee, Gwang-Geun; et al, APPLIED PHYSICS LETTERS, v.96, no.23, 2010-06
11	Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors Shin, Jae-Heon; Lee, Ji-Su; Hwang, Chi-Sun; Park, Sang-Hee Ko; Cheong, Woo-Seok; Ryu, Minki; Byun, Chun-Won; et al, ETRI JOURNAL, v.31, no.1, pp.62 - 64, 2009-02
12	Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell Yoon, Sung-Min; Byun, Chun-Won; Yang, Shinhyuk; Park, Sang-Hee Ko; Cho, Doo-Hee; Jung, Soon-Won; Kang, Seung-Youl; et al, IEEE ELECTRON DEVICE LETTERS, v.31, no.2, pp.138 - 140, 2010-02
13	Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chun-Won; Jung, Soon-Won; Ryu, Min-Ki; Park, Sang-Hee Ko; Kim, ByeongHoon; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.26, no.3, 2011-03
14	Nonvolatile memory transistors using solution-processed zinc-tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene) Yoon, Sung-Min; Jung, Soon-Won; Yang, Shin-Hyuk; Byun, Chun-Won; Hwang, Chi-Sun; Park, Sang-Hee Ko; Ishiwara, Hiroshi, ORGANIC ELECTRONICS, v.11, no.11, pp.1746 - 1752, 2010-11
15	Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor Yoon, Sung-Min; Yang, Shinhyuk; Ryu, Min-Ki; Byun, Chun-Won; Jung, Soon-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.7, pp.2135 - 2142, 2011-07
16	See-Through Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chun-Won; Jung, Soon-Won; Park, Sang-Hee Ko; Cho, Doo-Hee; Ryu, Min-Ki; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.5, pp.1494 - 1499, 2011-05
17	Skin-Like Oxide Thin-Film Transistors for Transparent Displays Lee, Haneol; Kim, Seungjun; Ko, Jong Beom; Yeom, Hye-In; Byun, Chun-Won; Lee, Seung Hyun; Joe, Daniel J.; et al, ADVANCED FUNCTIONAL MATERIALS, v.26, no.34, pp.6170 - 6178, 2016-09
18	Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator Yoon, Sung-Min; Yang, Shin-Hyuk; Jung, Soon-Won; Byun, Chun-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; Ishiwara, Hiroshi, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.5, pp.141 - 143, 2010

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