Reduction of Gate-Induced Drain Leakage (GIDL) Current in Single-Gate Ultra-Thin Body and Double-Gate FinFET Devices
- Issue Date
- 2002-09
- Language
- ENG
- Citation
International Conference on Solid State Devices and Materials, pp.140 - 141
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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