DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Yang-Kyu | - |
dc.contributor.author | Ha, Daewon | - |
dc.contributor.author | King, Tsu-Jae | - |
dc.contributor.author | Bokor, Jeffrey | - |
dc.date.accessioned | 2013-03-16T10:46:48Z | - |
dc.date.available | 2013-03-16T10:46:48Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-09 | - |
dc.identifier.citation | International Conference on Solid State Devices and Materials, v., no., pp.140 - 141 | - |
dc.identifier.uri | http://hdl.handle.net/10203/130507 | - |
dc.language | ENG | - |
dc.title | Reduction of Gate-Induced Drain Leakage (GIDL) Current in Single-Gate Ultra-Thin Body and Double-Gate FinFET Devices | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 140 | - |
dc.citation.endingpage | 141 | - |
dc.citation.publicationname | International Conference on Solid State Devices and Materials | - |
dc.identifier.conferencecountry | Japan | - |
dc.identifier.conferencecountry | Japan | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Ha, Daewon | - |
dc.contributor.nonIdAuthor | King, Tsu-Jae | - |
dc.contributor.nonIdAuthor | Bokor, Jeffrey | - |
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