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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Reduction of Gate-Induced Drain Leakage (GIDL) Current in Single-Gate Ultra-Thin Body and Double-Gate FinFET Devices

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dc.contributor.authorChoi, Yang-Kyu-
dc.contributor.authorHa, Daewon-
dc.contributor.authorKing, Tsu-Jae-
dc.contributor.authorBokor, Jeffrey-
dc.date.accessioned2013-03-16T10:46:48Z-
dc.date.available2013-03-16T10:46:48Z-
dc.date.created2012-02-06-
dc.date.issued2002-09-
dc.identifier.citationInternational Conference on Solid State Devices and Materials, v., no., pp.140 - 141-
dc.identifier.urihttp://hdl.handle.net/10203/130507-
dc.languageENG-
dc.titleReduction of Gate-Induced Drain Leakage (GIDL) Current in Single-Gate Ultra-Thin Body and Double-Gate FinFET Devices-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage140-
dc.citation.endingpage141-
dc.citation.publicationnameInternational Conference on Solid State Devices and Materials-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorHa, Daewon-
dc.contributor.nonIdAuthorKing, Tsu-Jae-
dc.contributor.nonIdAuthorBokor, Jeffrey-
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EE-Conference Papers(학술회의논문)
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