Showing results 1 to 3 of 3
Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state Nahm, Ho-Hyun; Kim, Yong-Sung; Kim, Dae Hwan, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.249, no.6, pp.1277 - 1281, 2012-06 |
Role of lone-pair electrons in Sb-doped amorphous InGaZnO4: Suppression of the hole-induced lattice instability Nahm, Ho-Hyun; Kim, Yong-Sung, APPLIED PHYSICS LETTERS, v.102, no.15, 2013-04 |
Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4 Nahm, Ho-Hyun; Kim, Yong-Sung, NPG ASIA MATERIALS, v.6, 2014-11 |
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